In booth #207 at European Microwave Week (EuMW 2016) at ExCel London, UK (4–6 October), MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, ...
As part of the Local Control of Materials Synthesis (LoCo) program of the US Defense Advanced Research Projects Agency (DARPA), the University of Colorado, Boulder (CU) have developed the new electron-enhanced atomic layer deposition ...
Tokyo-based Mitsubishi Electric Corp has developed a 220W-output gallium nitride high-electron-mobility transistor (GaN-HEMT) with what is claimed to be world-leading drain efficiency of 74% (in load-pull measurements) for 2.6GHz-band base ...
Tags: Mitsubishi Electric, GaN-HEMT
BluGlass Ltd of Silverwater, Australia – which was spun off from the III-nitride department of Macquarie University in 2005 to develop a low-temperature process using remote plasma chemical vapor deposition (RPCVD) to grow materials ...
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...
Even with the well-publicized consolidation of RF Micro Devices and TriQuint Semiconductor, Infineon's acquisition of International Rectifier (IR) and most-recently Wolfspeed, and NXP Semiconductors' acquisition of Freescale Semiconductor, ...
Tags: GaN, Micro Devices, Semiconductor
Dialog Semiconductor plc of London, UK, a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology, has announced its first gallium nitride (GaN) power IC ...
Tags: GaN, Dialog Semiconductor plc, SSL
University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
For first-half 2016, deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported revenue of €55.5m, down 31% on first-half 2015's €80.7m, reflecting the ongoing weak demand environment in the firm's ...
Tags: Aixtron SE, MOCVD, GaN
Raytheon Company of Waltham, MA, USA has given the US Army a look into the future of missile defense technology, as the firm provided its comprehensive vision for the next generation of air and missile defense radar. The information was ...
Tags: Raytheon, LTAMDS, Missile Defense Sensor
Chinese manufacturers technology have advanced in the past year to result in large GaN price fluctuations, and have entered III-V EPI-wafer synthesizing industry to build a comprehensive IoT and telecommunication supply chain in the ...
Tags: GaN Technology, LED manufacturer
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...
Tags: EpiGaN, GaN-on-Si, nomination
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) says that in the last fiscal quarter it has delivered several hundred units of its gallium nitride (GaN)-based solid-state power ...
Tags: GaN-based SSPAs, HEMT, Advantech Wireless
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that Epistar Corp of Hsinchu Science-based Industrial Park, Taiwan (the world's largest manufacturer of LED epiwafers and chips) has ordered ...
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched a new generation of gallium nitride (GaN)-based solid-state power amplifiers (SSPAs) with a number of improvements to ...
Tags: GaN-based SSPAs, Advantech Wireless, HEMT