Stion Corp of San Jose, CA, USA says that its CIGS (copper indium gallium selenium) photovoltaic module has passed the 'Thresher' test performed at the Renewable Energy Test Center (RETC) in Fremont, CA. The Thresher test is intended to ...
Tags: Stion, CIGS, Thresher test
Researchers at nanoelectronics research center imec of Leuven, Belgium (a partner in Solliance and EnergyVille), Germany's Karlsruhe Institute of Technology (KIT), and ZSW (Zentrum für Sonnenenergie- und Wasserstoff-Forschung — ...
Tags: stacked perovskite, CIGS, solar module
Tokyo-based Mitsubishi Electric Corp is expanding its lineup of gallium nitride high-electron-mobility transistors (GaN HEMTs) to include models operating at frequencies of 13.75–14.5GHz with saturated output power of 100W (50.0dBm) ...
Tags: Mitsubishi Electric, GaN HEMTs
Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...
Tags: 2D GaN, graphene encapsulation, SiC
Exhibiting for the first time at an electronic warfare (EW) exhibition in the United Arab Emirates (UAE), on stand 26 at the Electronic Warfare GCC Conference (EW GCC 2016) in Abu Dhabi (25-26 October) UK-based TMD Technologies Ltd (TMD) - ...
Tags: TMD, EW exhibition, EW GCC 2016
A strategic partnership has been announced for the copper indium gallium diselenide (CIGS) thin-film photovoltaic cell technology of Avancis GmbH of Torgau, Germany to be used in the semi-transparent WYSIPS Design Glass energy-producing ...
In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...
Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016
Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...
Monolithic microwave integrated circuit developer Custom MMIC of Westford, MA, USA has added to its expanding product range with two new gallium arsenide (GaAs) MMIC switches, the non-reflective CMD234C4 and CMD235C4. The CMD234C4 is a ...
Tags: Custom MMIC, GaAs, CMD234C4, CMD235C4
Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...
Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient
At the Solar Power International event in Las Vegas (12-15 September), copper indium gallium diselenide (CIGS) thin-film photovoltaic solar cell and panel maker MiaSolé of Santa Clara, CA, USA announced a new sales channel ...
Tags: MiaSolé, CIGS, Solar Power International, Inovateus Solar
At Solar Power International in Las Vegas (12-15 September), copper indium gallium diselenide (CIGS) thin-film photovoltaic solar cell and panel maker MiaSolé of Santa Clara, CA, USA (which was founded in 2004 and acquired by ...
In Hall 11/D59 at the glasstec trade fair for glass production and processing (20–23 September), copper indium gallium diselenide (CIGS) thin-film photovoltaic module maker Avancis GmbH of Torgau, Germany is launching its new PowerMax ...
Tags: AVANCIS, CIS PV module, SKALA