Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that Epistar Corp of Hsinchu Science-based Industrial Park, Taiwan (the world's largest manufacturer of LED epiwafers and chips) has ordered ...
Advantech Wireless Inc of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has launched a new generation of gallium nitride (GaN)-based solid-state power amplifiers (SSPAs) with a number of improvements to ...
Tags: GaN-based SSPAs, Advantech Wireless, HEMT
University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...
South Korean UV LED and blue LED chip maker Seoul Viosys Co Ltd has filed a lawsuit with the Federal District Court of Southern New York accusing P3 International (a US-based manufacturer of home electronics products that sells its products ...
Tags: UV LEDs, Seoul Viosys, Electronic Technology
For fiscal first-quarter 2017 (to 2 July 2016), Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has reported revenue of $697.6m, up ...
Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...
Tags: Green LEDs, MOCVD
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA - which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications – has announced its Phase Eight ...
Tags: GaN Device, integrated circuits
Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...
Tags: Semiconductor, GaN power devices
In its newsletters in April 2016 and June 2015 in-situ metrology system maker LayTec AG of Berlin, Germany reported on x-ray diffraction (XRD)-gauged nk database improvements for InGaAsP (indium gallium arsenide phosphide) and InGaAlAs ...
South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...
Tags: Low-Temperature Barriers, Quantum
Vishay Intertechnology Inc of Malvern, PA, USA has expanded its offering of mid-power UV LEDs in the 365nm wavelength range with a new device featuring a silicone lens in a compact 1.6mm by 1.6mm by 1.4mm surface-mount package. Designed to ...
Spending on RF high-power semiconductors for the wireless infrastructure markets has flattened out this year, despite the fact that the overall market hit well over $1.5bn in 2015, according to ABI Research's report 'RF Power ...
Tags: High-Power Semiconductor, GaN
Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications) says that its infrastructure solutions have supported more than twenty 5G ...
Tags: Qorvo, Infrastructure Providers
LED maker Kingbright Co LLC City of Industry, CA, USA has launched what it claims is the industry's smallest SMD LED, the HELI-UM series. The 0.65mm x 0.35mm x 0.20mm (0201) footprint of the HELI-UltraMiniature allows it to fit into ...