Modelithics Inc of Tampa, FL, USA, which provides RF and microwave active and passive simulation models for electronic design automation (EDA), and Qorvo Inc (a provider of core technologies and RF solutions for mobile, infrastructure and ...
Tags: Modelithics, passive simulation models, electronic design
In booth #1348 at the 2015 IEEE MTT-S International Microwave Symposium & Exhibition (IMS 2015) in Phoenix, Arizona (17-22 May), Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated ...
Tags: Microsemi, Microwave Devices
Korea Institute of Science and Technology has presented what it says is the first demonstration of indium gallium arsenide on-insulator (In0.53Ga0.47As-OI) transistors with a buried yttrium oxide (Y2O3 BOX) layer [SangHyeon Kim et al, IEEE ...
At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), ON Semiconductor of Phoenix, AZ, USA (which supplies silicon-based power and signal management, logic, discrete and custom devices for ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced an eGaN FET designed with a ...
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching transistors based on its proprietary Island Technology for power conversion and control applications, has signed an agreement with ...
At the 30th IEEE Applied Power Electronics Conference and Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Transphorm Inc of Goleta, near Santa Barbara, CA, USA (which designs and provides gallium nitride-based power conversion ...
Tags: Transphorm, APEC, Electronics
At the 30th IEEE Applied Power Electronics Conference & Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Infineon Technologies AG of Munich, Germany has announced the expansion of its gallium nitride (GaN)-on-silicon technology ...
Tags: Evatec Sputtering, PVD, Electronics
To provide an easy-to-use way for power systems designers to evaluate the performance of gallium nitride transistors and get their products into volume production quickly, Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which ...
Tags: EPC, FETs, Electronics
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched a 650W gallium nitride (GaN) on silicon carbide ...
Tokyo-based Mitsubishi Electric Corp has developed a gallium nitride high-electron-mobility transistor (GaN HEMT) offering high output power and efficiency for use in base transceiver stations (BTS) operating in the 3.5GHz band for ...
Tags: Mitsubishi Electric, GaN HEMT
Texas Instruments Inc (TI) has introduced what it claims is the first 80V, 10A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, consisting of a high-frequency driver and two GaN FETs in a half-bridge ...
Tags: GaN FETs, transistor
Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC) 2015, taking place March 15-19 in Charlotte, North Carolina. In booth 501, the company will ...
Tags: Vishay, APEC 2015, power MOSFET
Teledyne Scientific & Imaging and test instrument maker Teledyne LeCroy of of Chestnut Ridge, NY, USA (a subsidiary of Teledyne Technologies Inc) say that researchers at the Microwave Electronics Lab at Chalmers University of Technology in ...
Tags: Wireless Transmission, Electronics
Skysilicon Co Ltd of Chong Qing City, China (which makes discrete power devices and power ICs, MEMS sensors and compound semiconductor devices) has released what is reckoned to be China's first gallium nitride (GaN) power device ...
Tags: GaN-on-Si MISHEMTs, Electronics