Siemens and Valeo have signed an agreement to establish a joint venture (JV) to develop powertrains for electric cars. The JV will have headquarters in Erlangen, Germany, and facilities in France, Norway, Poland, Hungary and China. ...
Tags: Siemens, Valeo, JV, Joint venture, Powertrains, Electric cars
ACCO Semiconductor Inc of Sunnyvale, CA, USA, a fabless provider of RF front-end components manufactured using standard high-volume bulk CMOS processes for smart-phone and Internet of Things (IoT) applications, has closed a $35m funding ...
Tags: CMOS PAs GaAs PAs
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that its G5+ C multi-wafer batch metal-organic chemical vapor deposition (MOCVD) platform has been qualified for the manufacturing of specific buffer layers as ...
Cree Inc of Durham, NC, USA has introduced the XLamp XP-G3 LED, which delivers 31% more lumens and 8% higher lumens-per-watt (LPW) than the XP-G2 LED. Leveraging key elements of Cree's SC5 Technology Platform, the high-power XP-G3 LED ...
Tags: Cree XLamp LEDs
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has introduced a ...
Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
The Semiconductor's business unit of Raytheon UK in Glenrothes, Scotland (a subsidiary of Raytheon Company of Waltham, MA, USA) and Newcastle University's School of Electrical and Electronic Engineering have collaborated to produce silicon ...
Tags: Raytheon, Newcastle University, Sic-Based Analog Circuitry
Market sectors encompassing telecommunications, consumer electronics, innovative energy applications in transportation, electricity generation and other market sectors are increasingly valuing power semiconductor devices as usage of these ...
Tags: AC driver, railway applications, high power
GigOptix Inc of San Jose, CA, USA (a fabless supplier of analog semiconductor and optical communications components for fiber-optic and wireless networks) has launched a complete chipset portfolio for 28Gbps- and 100Gbps-based solutions for ...
Tags: GigOptix
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MASC-37028 and MASC-37029, dual 28Gbps clock ...
Tags: M/A-COM, CDR Devices, Driver
Sebastian Herkner’s O-Light at the Light + Building Fair Buschfeld presented the O-Light for the first time at the Light + Building Fair 2016. Designed by Sebastian Herkner, O-Light is the world’s first OLED light (30 cm ...
Tags: Buschfeld, O-light, The Light+Building Fair
Tokyo-based Mitsubishi Electric Corp says that on 1 July it will start shipping a laser-diode transmitter optical subassembly (TOSA) capable of supporting 100Gbps optical transmissions. The new FU-402REA is being displayed at the Optical ...
Tags: Mitsubishi Electric, EML TOSA
GE Aviation (an operating unit of GE) has been awarded a $2.1m contract from the US Army to develop and demonstrate silicon carbide (SiC)-based power electronics supporting high-voltage next-generation ground vehicle electrical power ...
Tags: GE Aviation, SiC power devices