Tokyo-based equipment maker Disco Corp has developed the KABRA (Key Amorphous-Black Repetitive Absorption) laser ingot slicing method. Implementing the process is said to enable high-speed production of silicon carbide (SiC) wafers, ...
Tags: SiC, Disco Corp, laser ingot slicing method
Researchers based in UK, France, Australia and the USA have developed a chemical epitaxial lift-off (ELO) technique for full 2-inch-diameter gallium nitride (GaN) grown on sapphire and free-standing substrates [Akhil Rajan et al, J. Phys. ...
Tags: GaN, HVPE, free-standing wafers
John Bowers, a professor of electrical and computer engineering and of materials at University of California Santa Barbara (UCSB), has been selected to receive the 2017 Institute of Electrical and Electronics Engineers (IEEE) Photonics ...
Tags: Integrated Photonics, PICs
Due to rapid decline in cell prices, the mono and multi-Si wafer market witnessed weaker prices. Taiwanese manufacturers couldn’t tolerate prices above US$ 0.72/pc, which put pressures on wafer manufacturers. The average trading price ...
Tags: solar cell, PV
For second-quarter 2016, AXT Inc of Fremont, CA, USA – which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials – has reported revenue of $20.5m, down slightly on $21m a year ...
Tags: raw materials
In its newsletters in April 2016 and June 2015 in-situ metrology system maker LayTec AG of Berlin, Germany reported on x-ray diffraction (XRD)-gauged nk database improvements for InGaAsP (indium gallium arsenide phosphide) and InGaAlAs ...
EV Group, a supplier of wafer bonding and lithography equipment for the MEMS, nanotechnology and semiconductor markets, introduced the EVG50 automated metrology system. Designed to support the increasingly stringent manufacturing ...
Tags: Advanced Packaging, EV Group
The University of Manchester and the University of Cambridge in the UK have been comparing efficiency droop in low-temperature photoluminescence (PL) experiments on non-polar m-plane and polar c-plane indium gallium nitride (InGaN) quantum ...
Infineon Technologies AG of Munich, Germany has entered into a definitive agreement to acquire the Wolfspeed Power & RF division of Cree Inc of Durham, NC, USA for $850m in cash (about €740m). The deal also includes the related silicon ...
Plextek RFI Ltd of Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, has announced a new reference design for a gallium nitride (GaN) power amplifier (PA) monolithic microwave integrated circuit ...
Tags: MMICs, microwave, millimeter-wave modules
The global light-emitting diode (LED) packaging equipment market will rise at a compound annual growth rate (CAGR) of almost 2% to more than $656m in 2020, according to a report by Technavio. The report considers the emergence of COB ...
Tags: LED, packaging equipment, COB
With the re-grouping of teams from III-V Lab (the joint Alcatel-Lucent, Thales and CEA-Leti industrial research laboratory), Almae Technologies SAS is taking over III-V Lab's facilities at Marcoussis, which is sited on the Plateau de Saclay ...
Tags: CEA-Leti, III-V Lab, laser components
Emcore Corp of Alhambra, CA, USA – which provides indium phosphide (InP)-based optical chips, components, subsystems and systems for the broadband and specialty fiber-optics markets – has completed its strategic review and will ...
Tags: Emcore Corp, optical chips
3D-Micromac AG of Chemnitz, Germany (which supplies laser micromachining systems and roll-to-roll laser systems for the photovoltaic, medical device and electronics markets) says that its microDICE laser micromachining system has been ...
Tags: High-Power Diodes, power device
Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor