Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France and EpiGaN nv in Belgium have claimed a record combination of specific on-resistance and breakdown voltage for a double heterostructure field-effect transistor ...
Scientists at the US Naval Research Laboratory (NRL) have suggested a method that could significantly increase the efficiency of green-blue-ultraviolet LEDs based on GaInN/GaN, AlGaN/GaN and AlInN/GaN quantum wells. It is reckoned that ...
Researchers associated with Taiwan National Central University and Epistar Corp are developing a method to transfer indium gallium nitride (InGaN) light-emitting diodes (LEDs) to ceramic aluminium nitride (AlN) substrates for high-voltage ...
Tags: InGaN LED, Ceramic Substrate
University of Notre Dame (UND) is developing gallium nitride (GaN) quantum dots in aluminium nitride (AlN) as a route to deep ultraviolet (UV) light-emitting diodes (LEDs) [Jai Verma et al, Appl. Phys. Lett., v104, p021105, 2014]. ...
Tags: UV Light Emission, LEDs
Tokyo-based Nikkiso Co Ltd,which is developing and commercializing deep ultraviolet(UV)light-emitting diodes,says that it is establishing a new factory in Japan's Ishikawa Prefecture.The firm aims to start production in mid-2014 and install ...
Tags: DUV LEDs, LED Production Plant, led
Ammono S.A. of Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, has announced that it is partnering with Kyma Technologies Inc of Raleigh, NC, USA and MicroLink Devices of Niles, IL, USA in two novel ...
Tags: efficiency of power electronics, semiconductor materials
Researchers at Korea's Chonbuk National University and Korea Institute of Science and Technology have improved the contact of graphene with p-type gallium nitride (p-GaN), resulting in improved near-ultraviolet (NUV) light-emitting diodes ...
Tags: Near-ultraviolet LEDs, Graphene GaN MOCVD, Gallium Nitride
Researchers at Meijo University and Nagoya University, Japan, have produced low-resistance n-type aluminium gallium nitride (n-AlGaN) [Toru Sugiyama et al, Appl. Phys. Express, vol6, p121002, 2013]. Using the n-AlGaN as part of an ...
Tags: LED, Electrical, Electronics
Researchers at Samsung Electronics and Seoul National University (SNU) in Korea have produced high-quality free-standing gallium nitride (GaN) substrates from hydride vapor phase epitaxy (HVPE) on silicon [Moonsang Lee et al, Appl. Phys. ...
Tags: GaN-on-silicon substrates GaN HVPE, Electrical, Electronics
University of California Santa Barbara (UCSB) has been using limited area epitaxy (LAE) to improve the performance of lasers diodes (LDs) grown on free-standing semipolar (20-21) gallium nitride (GaN) substrates [Matthew T. Hardy et al, J. ...
University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical
A Korea/USA team of engineering researchers has developed a gallium nitride (GaN) metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) with embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Semicond. Sci. ...
Tags: GaN Transistors, Embedding
University of California Santa Barbara (UCSB) has developed semipolar (20-2-1) nitride semiconductor laser diodes (LDs) without using aluminium gallium nitride (AlGaN) as the cladding material for optical confinement [A. Pourhashemi et al, ...
Ultraviolet (UV) light usually are light waves with 100 to 280 nanometer (nm) wavelengths, according to a report by Chinese-language newspaper Science and Technology Daily. These lights are mostly used to kill germs, medically, and in ...
China’s Xidian University has produced ‘normally-off’ gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with a thin high-aluminium-content aluminium gallium nitride (AlGaN) barrier layer [Kai Zhang et al, ...
Tags: Xidian University, normally-off, GaN, HEMTs