AZZURRO chooses Veeco K465i MOCVD system for GaN-on-Si epi production Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview,NY,USA says that AZZURRO Semiconductors AG of Magdeburg,Germany,which makes gallium ...
Soitec (Euronext), a world leader in generating and manufacturing revolutionary semiconductor materials for the electronics and energy industries, and Chongqing Silian Optoelectronics Science & Technology Co., Ltd. (Silian), an established ...
Azzurro Semiconductors AG's development of next generation gallium nitride on 200 mm silicon substrates is supported by the local government of Saxony.The minister for science and technology,Sabine von Schorlemer handed the official grant ...
Tags: Azzurro, semiconductors, LED, GaN-on-Si-wafer-technology
AZZURRO Semiconductors AG of Magdeburg,Germany,which makes gallium nitride(GaN)epitaxial wafers based on large-area silicon substrates,says that its development of next-generation GaN on 200mm silicon substrates is being supported by the ...
Tags: AZZURRO, GaN-on-Si, SAB, LED, power semiconductor
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview,NY,USA says that its SPECTOR-HT ion beam deposition(IBD)system has recently been qualified by Ocean Thin Film,which specializes in designing and depositing ...
Tags: Epitaxial, Films, Decoration
Friedrich-Alexander University Erlangen-Nuremberg,Germany,and ACREO AB,Sweden,have developed a transistor technology combining graphene with silicon carbide(SiC)[S.Hertel et al,Nature Communications,published 17 July 2012]. Graphene is a ...
Tags: transistor, Graphene, Electrical
Taiwanese LED maker Genesis investing $35m this year in its China plant construction Taiwan-based LED chipmaker Genesis Photonics Inc of Southern Taiwan Science Park (STSP) in Tainan is scheduled to invest US$35m this year on the ...
Taiwan Genesis Photonics has scheduled to pour US$35 million in 2012 in China to build Kunshan plant in southern China. The new plant is a joint venture between Genesis and the Kunshan municipal government.Construction began in September ...
Taiwan-based LED chipmaker Genesis Photonics is scheduled to invest US$35 million in 2012 in China on the construction of its plant in Kunshan,southern China.The plant is expected to be completed in the third quarter. The Kunshan ...
EpiGaN starts 8-inch GaN-on-Si development on Aixtron reactors Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that new customer EpiGaN of Hasselt, Belgium, a start-up manufacturer of III-nitride epitaxial material, ...
Tags: Aixtron MOCVD
AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in ...
Tags: MOCVD, GaN-on-Si Wafer
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview,NY,USA says that more than 150 LED manufacturing customers recently attended its metal-organic chemical vapor deposition(MOCVD)User Meeting in ...
Tags: Veeco Instruments Inc of Plainview, MOCVD User Meeting in Tainan
University of Massachusetts Lowell, Universidad de Salamanca, and North Carolina State University have integrated aluminium oxide dielectric into III-V ballistic deflection transistors (BDTs) for the first time [Vikas Kaushal et al, IEEE ...
Tags: Aluminium Oxide, Ballistic Deflection, Improved Transconductance
The Millimeter-Wave Electronics Group of the Swiss Federal Institute of Technology(ETH)Zurich has been exploring the use of Teflon amorphous fluoropolymer(AF)as an interlayer dielectric for III-V double heterostructure bipolar ...
Tags: Teflon, transistor, AF, DHBT
Chongqing Silian Optoelectronics Science & Technology Co., Ltd. (Silian) has cooperated with Soitec (Euronext) to jointly develop gallium nitride (GaN) template wafers using hydride vapor phase epitaxy (HVPE). And the partner companies plan ...
Tags: GaN wafers, LED