Aluminium Oxide articles & resources on Made-in-China.com

Constantia Flexibles Invests in Film Technology at Weiden Site in Germany

Sep 8, 2017

Constantia Flexibles has invested approximately €6m to meet increasing demand for specialty laminates with high property barriers for confectionery, coffee, dry food and snacks as well as processed meat industries. The company ...

Tags: Constantia Flexibles, packaging

Indium Gallium Arsenide Quantum Well Transistors on 300mm Silicon

May 18, 2017

Researchers in South Korea and the USA claim record 2190cm2/V-s effective mobility for indium gallium arsenide (InGaAs) quantum well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) on 300mm-diameter (100) silicon ...

Tags: Transistors, MOSFETs

Sodium Flux Route to Free-Standing Gallium Nitride Substrates

Jul 19, 2016

Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...

Tags: Gallium Nitride Substrates, GaN crystal

Indium Gallium Arsenide MOSFET Used as Radio-Frequency Switch

Mar 30, 2016

Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...

Tags: InGaAs MOSFET RF switch

Non-Alloyed Contacts For Gallium Arsenide Devices

Mar 9, 2016

Researchers in Korea have been developing improved non-alloyed contacts for gallium arsenide (GaAs) complementary metal-oxide-semiconductor (CMOS) and high-electron-mobility transistors (HEMTs) [Seung-Hwan Kim et al, IEEE Electron Device ...

Tags: GaAs, HEMTs, CMOS

High-Temperature Resistant Composite Films: Wipak Group

Oct 9, 2015

For high temperature applications, Wipak has developed a plastic composite which offers ideal product protection. New: WALOX is a transparent alternative to compo-sites based on polyester, laminated with aluminium oxide (AlOx) or silicon ...

Tags: plastic composite, film, glass packages

High-Pressure Anneal for Indium Gallium Arsenide Transistors

Aug 10, 2015

Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...

Tags: Transistors, capacitors

Researchers in China and Hong Kong Have Claimed The Highest Output Power Density

Jul 13, 2015

Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...

Tags: GaN MIS-HEMTs, PECVD ALD MOCVD

Toyoda Gosei Developed Vertical GaN SBDs Capable

Jul 13, 2015

Japan's Toyoda Gosei Co Ltd has developed vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) capable of handling 50A forward current with 790V reverse blocking [Nariaka Tanaka et al, Appl. Phys. Express, vol8, p071001, 2014]. "To ...

Tags: Vertical Schottky barrier, power supply, diodes Free standing

Indium Gallium Arsenide on Insulator Transistors with Buried Yttrium Oxide

Apr 24, 2015

Korea Institute of Science and Technology has presented what it says is the first demonstration of indium gallium arsenide on-insulator (In0.53Ga0.47As-OI) transistors with a buried yttrium oxide (Y2O3 BOX) layer [SangHyeon Kim et al, IEEE ...

Tags: Insulator Transistors, Buried Yttrium Oxide

FTA Has Been Finalised Between Australia and China

Nov 25, 2014

Dairy and meat industry boost from new China FTA deal A new Free Trade Agreement (FTA) has been finalised between Australia and China, with the Australian dairy and meat industries expected to benefit. Australian Prime Minister Tony ...

Tags: Dairy Industry, Meat Industry, Agriculture

Notting Hill Carnival Is Seasonal Event on Calendar: Speculation About New iPhone

Aug 20, 2014

It’s late August, and joining Goodwood and the Notting Hill Carnival is the newest seasonal event on the calendar: speculation about new iPhones. One particular nugget lighting up fans’ eyes – and burning a hole in their ...

Tags: Notting Hill Carnival, iPhones, Electronics

Passivating Nitride Transistors Without Vacuum Processing

Aug 11, 2014

Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...

Tags: Electrical, Electronics, Transistor

Gallium Nitride Thin-Film Transistors Produced at Less Than 250ºC

Jul 10, 2014

Turkey's Bilkent University has used hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) to make gallium nitride (GaN) thin-film transistors (TFTs) at temperatures below 250°C [S. Bolat et al, Appl. Phys. Lett., vol104, ...

Tags: HCPA-ALD GaN Thin-film transistors, Electrical, Electronics, Transistors

South Korea Developed a Gate Stack for III-V Quantum Well QW MOSFETs

May 9, 2014

Researchers based in USA and South Korea have developed a gate stack for III-V quantum well metal-oxide-semiconductor field-effect transistors (QW MOSFETs) based on a bilayer dielectric of beryllium oxide (BeO) and hafnium dioxide (HfO2) ...

Tags: InGaAs MOSFETs QW MOSFETs InGaAs ALD, Electrical, Electronics

Aluminium Oxide

Related Products