A strong close to 2012 allowed the gallium arsenide device market to grow by about 2% to record revenue of slightly more than $5.3bn for the year, due mainly to the cellular segment, as most other segments for GaAs devices were flat or ...
Tags: GaAs Industry, Electrical
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK’s University of Nottingham has purchased two GENxplor R&D molecular beam epitaxy (MBE) systems for its School of Physics and ...
Tags: Optoelectronic, Electronics
Taiwan’s National Cheng Kung University has developed near-green light-emitting diodes (LEDs) using a new indium gallium nitride (InGaN) growth process that gives devices with a higher peak external quantum efficiency of 48.6% ...
Tags: LEDs, Near-green LEDs, InGaN MOCVD
Showa Denko (SDK) is launching silicon carbide (SiC) epitaxial wafers with a diameter of 6 inches (150mm) - the largest size currently available, it is claimed - for use in power devices. The firm is also selling a new grade of 4-inch ...
Tags: Epiwafers, Inverter Power Devices
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the University of Oklahoma will receive the first shipment of Veeco’s new GENxplor R&D molecular beam epitaxy (MBE) system early in ...
Semprius Inc of Durham, NC, USA, which designs and makes high-concentration photovoltaic (HCPV) solar modules, has raised its own world record for mass-produced photovoltaic module efficiency from 33.9% (announced in January 2012) to 35.5% ...
Tags: Solar Modules
Veeco Instruments announced that the University of Nottingham, United Kingdom, purchased two GENxplor™ R&D Molecular Beam Epitaxy (MBE) Systems for its School of Physics and Astronomy. The systems will enable the growth of high ...
Tags: MBE Systems, Lighting
The LED industry after entering into the lighting era still continues to face pressure to lower prices. LED manufacturers have thus begun competitively pushing their way into package free chip development. Manufacturers like Philips ...
Tags: Free Chip, LED Lighting
China-based LED epitaxial wafer and chip makers will add an estimated 69 and 125 MOCVD sets in total in 2013 and 2014, respectively, while Taiwan-based makers will add 212 in 2013 and 307 in 2014, according to matket watchers. Due to ...
Tags: LED Chip, LED Lighting, Epitaxial Wafer
Taiwan’s National Chiao-Tung University has developed a titanium nitride/copper (TiN/Cu) gate structure for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) that shows improvements over a comparison ...
Tags: GaN HEMT, Electronics
Germany's Azzurro Semiconductors AG has reported uniformity measurements for indium gallium nitride (InGaN) light-emitting diodes on large-diameter silicon substrates up to 200mm [Andrea Pinos, etal, Appl. Phys. Express, vol6, p095502, ...
Tags: InGaN Silicon substrates, LED, Electrical, Electronics
Taiwan-based LED epitaxial wafer and chip maker Genesis Photonics is expected to see consolidated revenues for the third quarter of 2013 increasing 10% mainly due to steady shipments of LED chips used in lighting, and for smartphones from ...
Tags: LED chip, LED epitaxial wafer
Taiwan-based LED epitaxial wafer and chip maker Epistar aims to have the largest production capacity in China among all LED chip makers through expanding production capacity at KFES Lighting, its joint venture with China Electronics (CEC) ...
Tags: LED Capacity, Lighting
KULeuven (Katholieke Universiteit Leuven), nanoelectronics research center Imec of Leuven, Belgium and the National Institute of Advanced Industrial Science and Technology (AIST) of Tsukuba, Japan have developed a solid-phase epitaxy ...
The Chinese Academy of Sciences’ Research and Development Center for Semiconductor Lighting has been exploring the effect of p-type doping of the barriers in multiple quantum well blue-green (~500nm) light-emitting diode (LED) ...
Tags: Blue-Green LEDs, Electronics