GaAs solar material maker Alta Devices boasts solar cells with an efficiency of 28.8%, but perhaps even more astonishing is the fact it can produce GaAs cells that are only 1-micron thick, which opens up the possibility of a whole new field ...
Tags: GaAs, solar material maker, Alta Devices, solar cells, lightweight
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA Inc says that the Korean Photonics Technology Institute (KOPTI) has purchased a GEN20 molecular beam epitaxy (MBE) system. The system will be ...
Tags: process equipment, Veeco Instruments Inc, molecular beam epitaxy
Researchers at University of Notre Dame and Kopin Corp have developed high-performance nitride semiconductor high-electron-mobility transistors (HEMTs) with indium gallium nitride (InGaN) channels [Ronghua Wang et al, Appl. Phys. Express, ...
Tags: semiconductor, high electron mobility transistors, InGaN
Rapidly declining pricing, softening demand and a still uncertain global economy are creating challenges for manufacturers at all stages of the optical industry supply chain, according to the Strategy Analytics GaAs and Compound ...
Tags: opto market, optical industry, LEDs, optoelectronic devices
Alta Devices of Sunnyvale, CA, USA has announced reference designs for what it claims are the world’s lightest and highest-energy-density flexible military charging mats. Alta fabricates single-junction gallium arsenide (GaAs) ...
Tags: Alta Devices, military charging mats, Mobile Charging Mats, company news
RF Micro Devices Inc of Greensboro, NC, USA says that RFMD fellow Kevin W. Kobayashi has been named a fellow of the Institute of Electrical and Electronics Engineers by the IEEE board of directors. The IEEE grade of fellow was conferred ...
Tags: RF Micro Devices, Electronics Engineers, IEEE, company news
After recovering strongly from 2009 with growth of 22% in 2010, the gallium arsenide (GaAs) substrate market slowed sharply in 2011, rising just 4% to nearly $360m, due to weak demand in RF circuits (handsets and WLANs) and in ...
Technologies Inc of Santa Clara,CA,USA has introduced the latest release of its high-frequency device modeling software platform,the Integrated Circuit Characterization and Analysis Program(IC-CAP).With IC-CAP 2013.01,a key improvement is ...
Tags: Agilent, IC-CAP Platform, Software
For second-quarter 2012, GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has reported net sales of $25.1m, down 11.7% on $28.4m last quarter and 29.5% on $35.6m a year ago. ...
Tags: Anadigics, financial report, USA, wireless and wireline communications
For fiscal second-quarter 2013 (to end-September 2012), Advanced Photonix Inc of Ann Arbor, MI, USA (which designs and makes silicon, InP- and GaAs-based APD, PIN, and FILTRODE photodetectors, HSOR high-speed optical receivers, and T-Ray ...
Tags: Advanced Photonix, sales, high speed optical receiver, network spending
Broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has introduced four new hybrid line amplifier module power doubler modules for CATV infrastructure networks. The firm says that its rugged ...
Tags: Anadigics, Power doubler, wireline communications, hybrid line
MicroWave Technology Inc (MwT) of Fremont, CA, USA, a subsidiary of IXYS Corp that makes microwave devices, MMICs, modules and subsystems for wireless communication infrastructure, defense, industrial and medical equipment applications, has ...
Skyworks Solutions Inc of Woburn, MA, USA, which manufactures analog and mixed-signal semiconductors, has launched a highly efficient, broadband, 13dB gain, gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) drive amplifier in ...
17 September 2012 Arsenide nanowires on graphite and graphene Researchers at Norwegian University of Science and Technology(NTNU)have succeeded in growing gallium arsenide(GaAs)and indium arsenide(InAs)compound semiconductor crystal ...
Tags: GaAs Nanowires, Solar Cells LEDs, Graphitic Substrates, Graphene
Diodes, in general, are made of very thin layers of semiconductor material; one layer will have an excess of electrons, while the next will have a deficit of electrons. This difference causes electrons to move from one layer to another, ...
Tags: LED, Light Emitting Diode