k-Space Associates Inc of Dexter, MI, USA (which supplies thin-film metrology tools for the semiconductor, compound semiconductor and solar markets) has reported revenue for its patented kSA BandiT wafer and film temperature monitoring ...
Tags: k-Space, Electronic Materials, Electrical
ClassOne Technology of Kalispell, MT, USA, which manufactures wet-chemical processing equipment (especially for cost-conscious emerging markets and users of smaller substrates), has delivered a fully automated Solstice S8 electroplating ...
Tags: AWSC, MMIC, Electrical
POET Technologies Inc of Toronto, Canada – which, through subsidiary OPEL Defense Integrated Systems (ODIS Inc) of Storrs, CT, USA, has developed the proprietary planar-optoelectronic technology (POET) platform for monolithic ...
Tags: POET, III-V-based electronic, Electronics
Sol Voltaics AB of Lund, Sweden, which provides nanomaterial technology for enhancing solar panels and other products, has demonstrated a 1-sun photovoltaic (PV) solar energy conversion efficiency of 15.3% using a gallium arsenide (GaAs) ...
Tags: GaAs, PV, Electronics
SAGE SatCom of San Diego, CA, USA (part of telecoms solutions provider REMEC Broadband Wireless), which provides compact Ka-band block up-converter (BUC) and transceiver solutions, is now shipping its high-power 20 watt linear Ka-band BUC ...
Tags: GaN, M&C, Electronics
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems for communications, defense & security, aerospace and industrial markets) has entered into a definitive ...
Tags: Microsemi, Vitesse, Electronics
Professor Martin Kuball of the University of Bristol's School of Physics in the UK is one of 19 people to receive the UK Royal Society's Wolfson Research Merit Award Jointly funded by the Wolfson Foundation and the UK's Department for ...
Tags: Wolfson, devices, Electronics
Cree Inc of Durham, NC, USA has introduced a 25W gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) for 6–12GHz performance. Leveraging the inherent benefits of GaN technology, the new MMIC enables extremely wide ...
Tags: integrated circuit, GaN technology
Skysilicon Co Ltd of Chong Qing City, China (which makes discrete power devices and power ICs, MEMS sensors and compound semiconductor devices) has released what is reckoned to be China's first gallium nitride (GaN) power device ...
Tags: GaN-on-Si MISHEMTs, Electronics
Peregrine Semiconductor Corp of San Diego, CA, USA - a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has teamed with Murata Manufacturing Co Ltd of Kyoto, Japan (its parent ...
Tags: Semiconductor, integrated circuits
Pasternack Enterprises Inc of Irvine, CA, USA (which makes passive and active RF, microwave and millimeter-wave products) has launched a line of ultra-broadband and millimeter-wave low-noise amplifiers that are in-stock and available to ...
Revenue for gallium nitride (GaN) RF devices in both military and commercial applications will grow at a compound average annual growth rate (CAAGR) of more than 20% to nearly $560m in 2019, according to the Strategy Analytics Advanced ...
Tags: GaN RF Device, GaN RF Market
Researchers at Japan's NTT Device Technology Laboratories have used silicon (Si) doping to achieve p-type conduction in gallium arsenide antimony (GaAsSb) produced with metal-organic chemical vapor deposition (MOCVD) on indium phosphide ...
In cooperation with international partners, Germany’s Forschungszentrum Jülich and the Paul Scherrer Institute (PSI) in Villigen, Switzerland have presented what is claimed to be the first semiconductor laser consisting solely of ...
Tags: Group-IV Lasers, clock signal, Electrical
Monolithic microwave integrated circuit (MMIC) developer Custom MMIC of Westford, MA, USA has added to its growing line of standard gallium arsenide (GaAs) amplifier products by launching the CMD163, a 17-27GHz low-noise amplifier (LNA) in ...
Tags: negative voltages, bias scheme, Electrical