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P-Type Doping Into Gaassb Layers Achieved by Mocvd Using Si as a Dopant Fristly
Jan 22, 2015Researchers at Japan's NTT Device Technology Laboratories have used silicon (Si) doping to achieve p-type conduction in gallium arsenide antimony (GaAsSb) produced with metal-organic chemical vapor deposition (MOCVD) on indium phosphide ...
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Tokyo Has Improved The Temperature Performance of 1.3 Quantum DOT
Aug 13, 2013University of Tokyo has improved the temperature performance of 1.3μm quantum dot (QD) laser diodes bonded to silicon [Katsuaki Tanabe et al, Appl. Phys. Express, vol6, p082703, 2013]. Photonic circuits are commonly created in silicon, ...
Tags: Quantum Dot Lasers, Electrical, Electronics