The board of directors of San'an Optoelectronics announced on the evening of June 18 that its wholly owned subsidiary, Xiamen San'an Optoelectronics Technology Co., Ltd, intends to spend 280 million Yuan at most to purchase 20 units of ...
Tags: LED Chip, Optoelectronics
Raytheon Company of Waltham, MA, USA has been honored by the Office of the Secretary of Defense (OSD) for successful completion of a Defense Production Act (DPA) Title III gallium nitride (GaN) production improvement program, culminating ...
Tags: GaN Production, Electrical
New RPI research proves the concept of integrating LED emitters on the same chip with other electronic components such as transistors, while other new research focuses on maximizing the light extraction efficiency of LEDs and lowering cost ...
Deposition equipment maker Aixtron SE of Herzogenrath, Germany has been awarded the 2013 LEDinside Aurora Award in the category “Most efficient MOCVD Equipment”. Aixtron received the award for its AIX G5+ MOCVD system for growth ...
Tags: Aixtron, MOCVD System
Dr. Sun Qian, vice president of silicon substrate LED R & D department of Lattice, gave a lecture titled with "R & D and Industrialization of Silicon Substrate GaN High Power LED" to the participants on 2013 the Latest Trends in LED ...
Tags: Lattice Power, Lighting
Fujitsu Laboratories of Kawasaki, Japan has developed compact gallium nitride high-electron-mobility transistor (HEMT)-based transceiver module technology with an output of 10W operating at frequencies up to the millimeter-wave band. ...
Tags: Fujitsu GaN HEMT, Electrical, Electronics
Northwestern University's Center for Quantum Devices has developed a suface-plasmon (SP) enhancement technique for ultraviolet (UV) light-emitting diodes (LEDs) produced on silicon substrates [Chu-Young Cho et al, Appl. Phys. Lett., vol102, ...
Tags: UV-LEDs, Electrical, Electronics
The Smart Lighting Engineering Research Center at Rensselaer Polytechnic Institute (RPI) has demonstrated the first monolithic integration of LED and high electron mobility transistor (HEMT) on the same gallium nitride (GaN) chip. It is ...
Tags: Smart Lighting, Lights, Lighting, LED Lighting
Chinese Academy of Sciences’ Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) has extended its work on double-gated nitride semiconductor high-electron-mobility transistors (DG-HEMTs) [Guohao Yu et al, IEEE Electron Device ...
Tags: Nitride HEMTs, Electrical
In response to SSL Manufacturing R&D funding opportunity announcement (FOA) DE-FOA-0000792, the US Department of Energy (DOE) has announced the competitive selection of five projects for solid-state lighting (SSL), involving a total of ...
Tags: Lumileds Lighting, Electrical
The Smart Lighting Engineering Research Center at Rensselaer Polytechnic Institute (RPI) in Troy, NY, USA has demonstrated what is reckoned to be the first monolithically integrated light-emitting diode (LED) and high-electron-mobility ...
Tags: Smart Lighting, GaN Chip
Freescale Semiconductor of Austin, TX, USA, which provides RF power technology for cellular markets, has announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet ...
Tags: Freescale, Electrical
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, broadband and industrial & scientific markets, has developed a family of products ...
Northrop Grumman Corp of Redondo Beach, CA, USA has developed a new gallium nitride (GaN) flange-packaged power amplifier targeting military and commercial Ka-band communication applications. The APN180FP represents the first commercial ...
Tags: Northrop Grumman, GaN HEMTs
Cree announced that it had shipped more than two million GaN high electron mobility transistors (HEMT) for cellular telecommunications and provided game-changing benefits over traditional silicon-based technologies, involving higher power, ...