Monolithic microwave integrated circuit (MMIC) developer Custom MMIC of Westford, MA, USA added to its standard product catalog by launching a gallium nitride (GaN) low-noise amplifier (LNA) housed in a leadless 4mm x 4mm ceramic package ...
At PCIM (Power Conversion Intelligent Motion) Europe 2015 in Nuremberg, Germany (19-21 May), ON Semiconductor of Phoenix, AZ, USA (which supplies silicon-based power and signal management, logic, discrete and custom devices for ...
Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...
Tags: DUV LEDs, DUV devices
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...
Tags: GaN-on-Si, Power Electronics, LEDs
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching transistors based on its proprietary Island Technology for power conversion and control applications, has signed an agreement with ...
GaN-on-GaN technology can be used to grow blue-light laser as a source of lighting with luminous efficiency of 220lm/W, said 2014 Nobel laureate in physics Shuji Nakamura in a speech given inTaipei recently. Nakamura, currently a ...
Plessey Semiconductors of Plymouth, UK has expanded the European network for its GaN-on-silicon LED products by entering into a sales representative agreement with electronics distributor ROM Electronik Ltd (based near Istanbul) for ...
The LED industry is now fully embracing the fast-growing lighting market as (based on revenues) LED lighting has become the largest sector among LED applications, surpassing LCD backlighting in 2014, and is expected to be the major driver ...
Tags: LEDs MOCVD, LED Chip
University of California Santa Barbara (UCSB) has used indium tin oxide (ITO) as part of the cladding for semi-polar indium gallium nitride (InGaN) laser diodes (LDs) [A. Pourhashemi et al, Appl. Phys. Lett., vol106, p111105, 2015]. The ...
Tags: Indium, InGaN substrates, Electrical
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched a gallium nitride (GaN) bias controller and ...
Tags: M/A-COM, semiconductors, Electronics
k-Space Associates Inc of Dexter, MI, USA (which supplies thin-film metrology tools for the semiconductor, compound semiconductor and solar markets) has reported revenue for its patented kSA BandiT wafer and film temperature monitoring ...
Tags: k-Space, Electronic Materials, Electrical
Energized by growing demand for power supplies, hybrid and electric vehicles, photovoltaic (PV) inverters and other established applications, the emerging global market for silicon carbide and gallium nitride power semiconductors will grow ...
Tags: GaN SiC Power electronics, power supplies, Electronics
In acquiring an 80.1% stake in Philips' combined LED components and Automotive lighting business (with Netherlands-based Philips retaining the remaining 19.9%), new owners GO Scale Capital (an investment fund sponsored by GSR Ventures and ...
Tags: Lumileds, LED components, Electronics
X-ray-based in-line metrology and defect detection tool maker Jordan Valley Semiconductors Ltd (JVS) of Migdal Haemek, Israel has received a strategic order for its QC3 high-resolution x-ray diffraction (HR-XRD) system for strain and ...
Funded by Science Foundation Ireland (SFI), Invest Northern Ireland (InvestNI) and the US National Science Foundation (NSF) government agencies through the US-Ireland R&D Partnership program, over €1m has been awarded for the project ...