Researchers at Meijo University and Nagoya University, Japan, have produced low-resistance n-type aluminium gallium nitride (n-AlGaN) [Toru Sugiyama et al, Appl. Phys. Express, vol6, p121002, 2013]. Using the n-AlGaN as part of an ...
Tags: LED, Electrical, Electronics
Sapphire substrate concept stocks have soared lately on China’s A-Shares market, but major international sapphire substrate suppliers stock prices have plunged, according to a China Securities Journal article. Out of the major ...
Brewer Science Inc of Rolla, MO, USA, which provides thin-wafer-handling materials, processes and equipment, has announced the first commercial placement of its Cee 1300CSX thermal slide debonder. The debonder was purchased by "an industry ...
Tags: Brewer Science, debonder, thermal slide debonder, electronic
Researchers at Samsung Electronics and Seoul National University (SNU) in Korea have produced high-quality free-standing gallium nitride (GaN) substrates from hydride vapor phase epitaxy (HVPE) on silicon [Moonsang Lee et al, Appl. Phys. ...
Tags: GaN-on-silicon substrates GaN HVPE, Electrical, Electronics
The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the light-emitting diode (LED) market is forecast to increase at a compound annual growth rate (CAGR) of 69% from 2013 to 2020, by which time they will account for 40% of ...
Tags: LED, electronics
Test, measurement and monitoring equipment supplier Tektronix Inc of Beaverton, OR, USA has expanded its family of precision power analyzers with the introduction of the PA1000 single-phase power analyzer. Featuring a patent-pending ...
Tags: power, electrical
The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the LED market is forecast to increase at a CAGR of 69% from 2013 to 2020, by which time they will account for 40% of all GaN LEDs manufactured, according to IHS. In ...
Tags: GaN-on-Silicon, LEDs
Plessey announced the availability of its next generation GaN-on-Silicon mid-power LEDs. The product family doubles the efficacy of Plessey's first generation MAGIC™ (Manufactured on GaN-on-Si I/C) products released in February 2013. ...
In conjunction with the Defense Manufacturers Conference (DMC 2013) in Orlando, FL (2-5 December), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA is releasing new gallium arsenide ...
The UK-based semiconductor company says that it has doubled efficacy since shipping its first GaN-on-Si LEDs back in April, and that its roadmap includes eclipsing the efficacy advantage currently held by sapphire-based LEDs. Plessey has ...
Tags: MID-Power LED, LED Lighting
Soraa, the world leader in the development of gallium nitride on gallium nitride (GaN on GaN™) LED technology, announced that it will open a new semiconductor fabrication plant in Buffalo, New York. In partnership with the State of ...
Plessey Semiconductors Ltd of Plymouth, UK has announced availability of its next-generation gallium nitride -on-silicon (GaN-on-Si) mid-power LEDs. The product family doubles the luminous efficacy of the firm’s first-generation MAGIC ...
THE local glass industry is booming with RM3bil turnover for both glass manufacturing and processing streams of the industry, said Malaysia Glass Association (MGA) chairman Ho Sai Woo. MGA was the local host for Glasstech Asia 2013, which ...
Tags: galss, technical processing, design
The global glass industry, valued at US$1.3 billion (RM4.18 billion), is expected to maintain a healthy growth rate as a result of continuous investments in the construction sector by developing countries. Singapore Glass Association ...
Tags: glass industry, construction, SGA
University of California Santa Barbara (UCSB) has been using limited area epitaxy (LAE) to improve the performance of lasers diodes (LDs) grown on free-standing semipolar (20-21) gallium nitride (GaN) substrates [Matthew T. Hardy et al, J. ...