Japan's Shimadzu Corp has developed a blue direct diode laser (DDL), providing what is claimed to be industry-leading brightness levels. The 10W-type laser is being exhibited at InterOpto 2013 at Pacifico Yokohama, Japan (16-18 October). ...
Tags: Blue laser diode, Electrical, Electronics
Singapore’s Nanyang Technological University (NTU) has developed a passivation process for aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on silicon substrates that significantly ...
Tags: Nitride HEMTs, Electrical
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless provider of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has appointed US engineering consultancy Vqdot as an Applications ...
Tags: GaN Systems, Electrical, Electronics
Global electronic components distributor Digi-Key Corp of Thief River Falls, MN, USA has announced new inventory of gallium nitride (GaN) power management products, available for immediate shipment as part of an exclusive global ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Researchers in Taiwan have used nanopyramid nitride semiconductor structures to explore long-wavelength green, olivine and amber light-emitting diode (LED) structures [Shih-Pang Chang, Optics Express, Vol. 21, p23030, 2013]. The team was ...
Tags: Nitride LEDs, Electronics
TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced the release of new gallium nitride (GaN) transistors that offer what is claimed to be superior gain, thermal management and efficiency for commercial and defense RF amplifier ...
Tags: TriQuint, Optical Modulator
Taiwan’s National Cheng Kung University has developed near-green light-emitting diodes (LEDs) using a new indium gallium nitride (InGaN) growth process that gives devices with a higher peak external quantum efficiency of 48.6% ...
Tags: LEDs, Near-green LEDs, InGaN MOCVD
PVA TePla of Wettenberg, Germany has launched the baSiC-T physical vapor transport (PVT) crystal growth system (which uses sublimation of a source powder at high temperatures) for the mass production of silicon carbide (SiC) material. ...
Tags: PVT System, Modular
Taiwan’s National Tsing Hua University has developed a method to improve the performance of zinc oxide (ZnO) transparent conductive oxide (TCO) as an electrode for short-wavelength nitride semiconductor light-emitting diodes (LEDs) ...
Tags: zinc oxide, LEDs
Taiwan’s National Chiao-Tung University has developed a titanium nitride/copper (TiN/Cu) gate structure for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) that shows improvements over a comparison ...
Tags: GaN HEMT, Electronics
Germany's Azzurro Semiconductors AG has reported uniformity measurements for indium gallium nitride (InGaN) light-emitting diodes on large-diameter silicon substrates up to 200mm [Andrea Pinos, etal, Appl. Phys. Express, vol6, p095502, ...
Tags: InGaN Silicon substrates, LED, Electrical, Electronics
M/A-COM Technology Solutions Inc of Lowell, MA, USA, which makes semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications, has announced the newest entry in its portfolio of GaN in Plastic packaged ...
Tags: MA-COM GaN RF power transistors, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has extended its range of high-speed, ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Modern power transistors based on gallium nitride (GaN) enable power electronic switches to operate at much higher switching frequencies compared with those based on silicon (Si). Advantages include increased power density per volume and ...
Tags: Fraunhofer ISE, Electrical, Electronics
After giving a trading update for first-half 2013 in late July, epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has confirmed record revenue of £63m (up 84% from £34.3m for first-half 2012). EBITDA (earnings ...
Tags: IQE, Electrical, electronics