Researchers at Samsung Electronics and Seoul National University (SNU) in Korea have produced high-quality free-standing gallium nitride (GaN) substrates from hydride vapor phase epitaxy (HVPE) on silicon [Moonsang Lee et al, Appl. Phys. ...
Tags: GaN-on-silicon substrates GaN HVPE, Electrical, Electronics
University of California Santa Barbara (UCSB) has been using limited area epitaxy (LAE) to improve the performance of lasers diodes (LDs) grown on free-standing semipolar (20-21) gallium nitride (GaN) substrates [Matthew T. Hardy et al, J. ...
University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical
University of California Santa Barbara (UCSB) has developed semipolar (20-2-1) nitride semiconductor laser diodes (LDs) without using aluminium gallium nitride (AlGaN) as the cladding material for optical confinement [A. Pourhashemi et al, ...
Soraa, the world leader in the development of GaN on GaN™ LED technology, announced that it has been awarded several million dollars in funding by U.S. Department of Energy’s Advanced Research Projects Agency - Energy (ARPA-E) ...
Tags: Soraa, GaN Substrates
In either a cautious or a more aggressive scenario, LED applications will be the key drivers for the bulk gallium nitride (GaN) market, reckons market research firm Yole Développement in its report 'Free-Standing & Bulk GaN ...
Tags: LED, Electrical, Electronics
ARPA-E deputy director Cheryl Martin has announced $27m in funding from the US Department of Energy's (DOE) Advanced Research Projects Agency-Energy (ARPA-E) for 14 projects aimed at developing next-generation power conversion devices that ...
Tags: Electrical, Electronics
Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) materials and related products and services, has provided an update on its aluminum ...
Tags: Kyma Technologies, Electronics
Researchers from the universities of California Santa Barbara (UCSB) and of New Mexico (UNM) have demonstrated semipolar nitride semiconductor blue and green laser diodes (LDs) with part of the upper cladding replaced by indium tin oxide ...
Tags: Iii-Nitride Lasers, Electrical
Ohio State University is proposing the use of a newly developed tunnel junction as a means to ameliorate the effects of efficiency droop in nitride semiconductor light-emitting diodes (LEDs) and other optoelectronic devices [Fatih Akyol et ...
Tags: LED, Electrical, Electronics
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has appointed 1000Bulbs.com as an online distributor of its new MR16 lamps. Founded by ...
Tags: lamps, Electrical, Electronics
LED forecast plays down GaN-on-silicon impact 23 Jul 2013 Sapphire is set to remain the entrenched wafer technology for solid-state lighting, say analysts at Lux Research. Despite the transition of LED-based solid-state lighting (SSL) ...
Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) materials and related products and services, has announced the commercial availability ...
Tags: Electrical, Kyma Technologies
Soraa has garnered much attention since founder Japanese LED scientist Shuji Nakamura has been helping drive the company towards success. Soraa was able to leverage funding from the US Department of Energy (DOE), and now the company has ...
Mass production of GaN template wafers based on sapphire substrates could free LED manufacturers' MOCVD reactors for more LED production and lower component cost helping drive the deployment of SSL. Hitachi Cable has become the second ...
Tags: Hitachi Cable, GaN-Template LED, Lighting