An Australian-UK consortium is offering a epitaxial silicon carbide buffer layer for 300mm silicon wafers, claiming it will improve gallium nitride growth for GaN-on-Si LED fabrication. The buffer is the result of over 10 years research ...
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, cable TV and industrial & scientific markets, has fully qualified its NPT1015 ...
Tags: RF Power Transistor, Nitronex
LayTec AG of Berlin, Germany (which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications) says that, in his invited talk at the LED Technology Forum in Singapore (7-10 ...
Tags: LayTec, Singapore's IMRE
UK-based etch, deposition and growth system maker Oxford Instruments Plasma Technology (OIPT), part of Oxford Instruments plc, has completed its series of Asian seminars in Beijing, China and Hsinchu, Taiwan, attracting a record total ...
Tags: OIPT, Electrical, Electronics
LED chip and lighting array maker Bridgelux Inc of Livermore, CA, USA has closed an agreement with Tokyo-based semiconductor manufacturer Toshiba Corp (announced on 22 April), which aims to strengthen and extend their strategic technology ...
Tags: Bridgelux, GaN-on-Si LEDs
Power semiconductor device maker International Rectifier Corp (IR) of El Segundo, CA, USA has qualified and shipped product built on its gallium nitride (GaN)-based power device technology platform for a home theater system manufactured by ...
LIVERMORE, Calif. & TOKYO -- Bridgelux Inc., a leading developer and manufacturer of LED lighting technologies and solutions, and Toshiba Corporation (TOKYO:6502), a world-leading electric manufacturer, today announced that they have ...
Tags: Bridgelux, Toshiba, LED Business
Toshiba's white LED package Bridgelux is selling its gallium nitride-on-silicon (GaN-on-Si)?technology and related assets to Toshiba. The news comes as the two companies announced that they will expand their licensing and manufacturing ...
The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...
Bridgelux is selling its gallium nitride-on-silicon (GaN-on-Si) technology and related assets to Toshiba Toshiba’s white LED package The two companies also announced they will ramp up a factory in Japan to make LEDs based ...
Tags: Bridgelux, GaN-on-Si Assets
Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
Electronic component distributor Richardson RFPD Inc (an Arrow Electronics Company) of LaFox, IL, USA has announced availability and full design support capabilities for a new evaluation kit for a 5W gallium nitride monolithic microwave ...
LED chip and lighting array maker Bridgelux Inc of Livermore, CA, USA has agreed to sell its gallium nitride-on-silicon (GaN-on-Si) technology and related assets to Tokyo-based semiconductor manufacturer Toshiba Corp. The firms will also ...
AIXTRON SE today announced that the University of Cambridge has successfully commissioned another multi-wafer Close Coupled Showerhead (CCS) MOCVD reactor at its new facility at the Department of Material Science and Metallurgy. The CCS ...
Tags: MOCVD Reactor, Gan-on-Si Wafers