Agilent Technologies Inc of Santa Clara, CA, USA has been selected by Nitronex LLC of Morrisville, NC, USA, a GaAs labs company that designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power devices, to provide a complete GaN ...
Tags: Electrical, Electronics
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK is to play a key part in a US public-private consortium of more than 25 companies, universities and state and federal organizations selected to lead the Next Generation ...
Tags: IQE, Power electronics, GaN-on-Si, CMOS
Laser dicing systems maker Advanced Laser Separation International NV (ALSI) of Beuningen, The Netherlands has received an order for a laser dicing system from Plessey Semiconductors Ltd for its LED manufacturing facility in Plymouth, UK. ...
Nitronex LLC of Morrisville, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, broadband, and industrial markets, has launched the NPA1006, a 28V, 20MHz-1GHz, ...
Tags: Electrical, Electronics
The LED lighting market in China is expected to double in size from 9.6 percent to 18 percent of all lighting used in the next four years, according to a recent growth forecast from Lux Research. This growth will be spurred by falling ...
Tags: LED Lighting, LED Market
silicon to play major role in LED production 13 Dec 2013 IHS predicts rapid transition to GaN-on-silicon LED manufacture for backlighting and some general lighting applications. Silicon switch In a dramatic change from the status ...
Tags: IHS, LED Production, LED
Sapphire substrate concept stocks have soared lately on China’s A-Shares market, but major international sapphire substrate suppliers stock prices have plunged, according to a China Securities Journal article. Out of the major ...
Researchers at Samsung Electronics and Seoul National University (SNU) in Korea have produced high-quality free-standing gallium nitride (GaN) substrates from hydride vapor phase epitaxy (HVPE) on silicon [Moonsang Lee et al, Appl. Phys. ...
Tags: GaN-on-silicon substrates GaN HVPE, Electrical, Electronics
The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the light-emitting diode (LED) market is forecast to increase at a compound annual growth rate (CAGR) of 69% from 2013 to 2020, by which time they will account for 40% of ...
Tags: LED, electronics
The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the LED market is forecast to increase at a CAGR of 69% from 2013 to 2020, by which time they will account for 40% of all GaN LEDs manufactured, according to IHS. In ...
Tags: GaN-on-Silicon, LEDs
Plessey announced the availability of its next generation GaN-on-Silicon mid-power LEDs. The product family doubles the efficacy of Plessey's first generation MAGIC™ (Manufactured on GaN-on-Si I/C) products released in February 2013. ...
The UK-based semiconductor company says that it has doubled efficacy since shipping its first GaN-on-Si LEDs back in April, and that its roadmap includes eclipsing the efficacy advantage currently held by sapphire-based LEDs. Plessey has ...
Tags: MID-Power LED, LED Lighting
Plessey Semiconductors Ltd of Plymouth, UK has announced availability of its next-generation gallium nitride -on-silicon (GaN-on-Si) mid-power LEDs. The product family doubles the luminous efficacy of the firm’s first-generation MAGIC ...
A Korea/USA team of engineering researchers has developed a gallium nitride (GaN) metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) with embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Semicond. Sci. ...
Tags: GaN Transistors, Embedding
During the Strategies in Light Europe Investor Forum, TSMC discussed its phosphor-on-die approach to LEDs while Seoul Semiconductor discussed the market opportunity and homogenous substrate development. The Strategies in Light (SIL) ...
Tags: LED, SIL Europe, Strategies