The US Department of Energy's National Renewable Energy Laboratory (NREL) and Alta Devices of Sunnyvale, CA, USA have jointly demonstrated that Alta's solar material retains its high efficiency in real-world conditions, particularly on hot ...
Tags: Electrical, Electronics, automotive industry
In the field of heavy engineering and manufacturing, Electrical Safety was always an important issue. Electricity once out of control can cause havoc and be fatal. It does not give any time to react, so precautionary measures are so very ...
A virtual forum called IEEE Online Conference on Green Communications (OnlineGreenComm 2013) will hold its third annual event from October 29 - 31. It will consist of sessions devoted to the development of next wave green communications and ...
Tags: Consumer Electronics, Electronics, green communications
It is reported that Hong Kong University of Science and Technology (HKUST) has developed silicon substrate green and yellow nitride semiconductor LEDs. Details of the development were published in the May 29th issue of IEEE Electronic ...
Tags: HKUST, Lighting, Semiconductor, LED
The emerging IEEE 802.11ac wireless LAN standard will be able to deliver faster connections wherever it's used, but the biggest benefit may come at public hotspots -- eventually. On Wednesday, the Wi-Fi Alliance started certifying ...
Tags: Wi-Fi Standard, 802.11ac
The growth in devices conforming to the IEEE standards 802.11ac and 802.11ad will occur in very different ways, with 802.11ac exploding into devices (including smartphones) from the start, while 802.11ad will see a more modest and staggered ...
Tags: Smartphones, Electronics
Analog semiconductor maker Skyworks Solutions Inc of Woburn, MA, USA is partnering with SMC Networks, a customer premise equipment (CPE) manufacturer for multi-service operators (MSOs), to develop wireless connectivity solutions for ...
Tags: semiconductor, Electrical, Electronics
Fujitsu Laboratories of Kawasaki, Japan has developed compact gallium nitride high-electron-mobility transistor (HEMT)-based transceiver module technology with an output of 10W operating at frequencies up to the millimeter-wave band. ...
Tags: Fujitsu GaN HEMT, Electrical, Electronics
At the 2013 IEEE MTT-S International Microwave Symposium (IMS) in Seattle, WA, USA (4-6 June), Peregrine Semiconductor Corp of San Diego, CA, USA, a fabless provider of radio-frequency integrated circuits (RFICs) based on ...
Tags: Peregrine, SOS, CMOS, SOI, Electronics
Chinese Academy of Sciences’ Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO) has extended its work on double-gated nitride semiconductor high-electron-mobility transistors (DG-HEMTs) [Guohao Yu et al, IEEE Electron Device ...
Tags: Nitride HEMTs, Electrical
In booth #930 at the IEEE MTT International Microwave Symposium (IMS 2013) in Seattle (4-6 June), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies) has introduced a new ...
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, broadband and industrial & scientific markets, has developed a family of products ...
RF Micro Devices Inc of Greensboro, NC, USA has launched a broadband, microwave voltage-controlled attenuator. The RFSA2113 provides a complete monolithic solution in a small 3mm x 3mm QFN package and operates over a frequency range of ...
Tags: RFMD Attenuators, Power Control
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...