In booth 1210 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (17-22 June), RF Micro Devices Inc of Greensboro, NC, USA has launched the RFVA0016 — a highly integrated broadband quarter-watt (1/4W) ...
Tags: RFMD, International, applications
In booth 1507 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (19–21 June), Skyworks Solutions Inc of Woburn, MA, USA (which manufactures high-reliability analog and mixed-signal semiconductors) has ...
Tags: Skyworks, Canada, manufactures
20 June 2012 Toshiba adds gain-and efficiency-optimized C-band GaAs FET PAs for microwave radio and BUCs In booth 710 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(19-21 June),Toshiba America Electronic ...
Tags: Toshiba, GaAs FET PAs, IMS 2012, microwave radio, BUCs
20 June 2012 Toshiba launches high-gain,high-power X-band GaN hybrid IC supporting AESA&PESA radar In booth 2710 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(19-21 June),Toshiba America Electronic ...
Tags: Toshiba, GaN HEMT, AESA&PESA radar, IMS 2012
20 June 2012 NXP's 0.65mm x 0.44mm x 0.2mm SiGe:C GPS LNAs offer 0.60dB noise figure NXP Semiconductors N.V.of Eindhoven,The Netherlands,which provides mixed-signal and standard product solutions,has unveiled the BGU8006 low-noise ...
Tags: NXP Semiconductors, WLCSP, GPS LNAs, BGU8006 LNA
20 June 2012 First 40GHz 2.5W/mm output performance of GaN/Si HEMTs Institute for Electronics,Microelectronics and Nanotechnology(IEMN)in France has demonstrated high-power-density nitride high-electron-mobility transistors(HEMTs)on ...
Tags: GaN/Si HEMTs, IEMN, AlGaN
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17–22 June),Freescale Semiconductor of Austin,TX,USA,which provides RF power technology for cellular markets,has launched new Airfast transistors ...
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has launched two gallium arsenide power ...
Cree Inc of Durham,NC,USA has launched a 40V,0.25µm,GaN-on-SiC HEMT process die product family,with power and bandwidth capabilities through the Ku-band that enables the replacement of travel-wave tubes with solid-state ...
Tags: Cree, GaN-on-SiC, HEMT, Amplifier
Cree Inc of Durham,NC,USA has announced the qualification and production release of two new gallium nitride(GaN)processes:G40V4(a 0.25µm process with operating drain voltage up to 40V)and G50V3(a 0.4µm process with operating ...
Cree Inc of Durham,NC,USA has released an updated process design kit(PDK)based on Agilent Technologies'Advanced Design System(ADS)software that will provide microwave and RF design engineers with a comprehensive suite of design and ...
Tags: Cree, GaN-on-SiC, HEMT, PDK, Software
Cree Inc of Durham,NC,USA has announced the sample release of a high-efficiency unmatched gallium nitride(GaN)high-electron-mobility transistor(HEMT)for military and commercial S-band radar applications. Rated at 60W for frequencies of ...
Tags: GaN, HEMT, High-Efficiency, Radar
RF and mixed-signal semiconductor maker Anadigics Inc of Warren,NJ,USA has launched the AWB7125 and AWB7225 small-cell power amplifiers(PAs),optimized for Band 5 WCDMA and LTE applications including picocells,enterprise-class femtocells,and ...
Tags: Anadigics, WCDMA, LTE Application, PA
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has launched what is claimed to be the first 802.11ac-ready Wi-Fi RF module for next-generation mobile devices.In addition to ...
Tags: TriQuint, Wi-Fi, Mobile Device, Download
Agilent Technologies Inc of Santa Clara,CA,USA has unveiled new technologies and developments for RF power amplifier design that will be part of the next major release of its flagship Advanced Design System electronic design ...
Tags: EDA, Software, Digital Applications, Microwave