We're super excited for the DARPA Robotics Challenge Trials that run tomorrow and Saturday,and we hope you are too.Before we get all wrapped up in it,though,it's important to understand what's realistic to expect from the robots during the ...
This is a guest post. The views expressed here are solely those of the author and do not represent positions of IEEE Spectrum or the IEEE. The recent robot-related news from Apple, Amazon, and Google shows serious momentum for the ...
Tokyo-based Mitsubishi Electric Corp has developed a laser diode-transmitter optical subassembly (TOSA) that enables 100Gbps optical transmission in one fiber using four-channel wavelength-division multiplexing (WDM), which should help to ...
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington DC (9-11 December), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK, Pennsylavania State University and the US Commerce Department's National ...
Tags: Low-Power Tunneling Transistor, Electrical, Electronics
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington D.C., USA (9-11 December), nanoelectronics research institute imec of Leuven, Belgium reported the first functional strained germanium (Ge) quantum-well channel ...
Tags: FinFETs III-V CMOS, Electrical, Electronics
At the IEEE International Electron Devices Meeting (IEDM 2013) in Washington DC (9-11 December), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK, Pennsylavania State University and the US Commerce Department's National ...
Tags: IQE, Electrical, Electronics
IIDEX Canada and Construct Canada will co-locate to create what they call North America's largest annual exposition and conference focusing on the design, construction and management of real estate: The Buildings Show. "We're excited to ...
RWTH Aachen University has reported the first small-signal response frequency characteristics for p-channel gallium nitride (GaN) heterostructure field-effect transistors (HFETs) [Herwig Hahn et al, Jpn. J. Appl. Phys., vol52, p128001, ...
Tags: GaN HFETs GaN MOCVD, Electrical, Electronics
The Center for Tomography Research Laboratory (CTECH Labs) introduced the latest technology in brain scanning at the 6th International IEEE Engineering in Medicine and Biology Society Conference on Neural Engineering at the Sheraton Hotel, ...
Tags: scan, brain, improved, international
Teledyne DALSA is helping a company in China to realize the full potential of machine vision. By incorporating the Canadian firm's multi-camera embedded machine-vision technology into its products, Shangdong-based Mingjia Packaging ...
IEEE Standards Association is commemorating the 40th anniversary of ethernet and the 30th anniversary of IEEE 802.3 "Standard for Ethernet" with the launch of its "I Spy Ethernet IEEE 802.3" contest. "The 'I Spy Ethernet IEEE 802.3' ...
Tags: Consumer Electronics, Electronics
Fabless semiconductor firm RFaxis Inc of Irvine, CA, USA, which designs RF semiconductors and embedded antenna solutions for wireless connectivity and cellular mobility, is demonstrating and showcasing its pure CMOS 802.11ac RF front-end IC ...
Tags: RFaxis CMOS, Electrical, Electronics
Hong Kong University of Science and Technology (HKUST) has developed a 600V gallium nitride on silicon (GaN/Si) normally-off metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with large gate swing and low current ...
Tags: GaN MIS-HEMTs AlGaN, Electrical, Electronics
Singapore’s Nanyang Technological University (NTU) has developed a passivation process for aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on silicon substrates that significantly ...
Tags: Nitride HEMTs, Electrical
Taiwan’s National Tsing Hua University has developed a method to improve the performance of zinc oxide (ZnO) transparent conductive oxide (TCO) as an electrode for short-wavelength nitride semiconductor light-emitting diodes (LEDs) ...
Tags: zinc oxide, LEDs