Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors
CrayoNano of Norway has grown GaAs nanowires on graphene, a patented hybrid material with competitive optoelectronic properties. "We have managed to combine low cost, transparency and flexibility in our new electrode," says Professor ...
Tags: Norwegians, Grow Gaas, graphene
4 September 2012 SITP orders Riber Compact 21 MBE system Riber S.A.of Bezons,France,which manufactures molecular beam epitaxy(MBE)systems as well as evaporation sources and effusion cells,has received an order for a Compact 21 MBE machine ...
Tags: SITP, MBE system, France, manufacture
Meaglow Ltd of Thunder Bay, Ontario, Canada – a privately held firm that produces a range of epitaxy equipment and MBE and MOCVD accessories, as well as providing specialized thin films to research institutes and industry - says that ...
Tags: MOCVD
The US National Science Foundation(NSF)has awarded Rochester Institute of Technology(RIT) 1.2million dollars to develop,fabricate and test a new family of infrared detectors grown on silicon substrates by Raytheon Visions Systems(RVS)of ...
Tags: The US National Science Foundation, Rochester Institute of Technology
IQE expects revenue growth in second-half 2012 following Q2 recovery According to an interim trading update for first-half 2012, epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK expects to report first-half revenue of ...
Veeco Instruments announced its financial results for the second quarter ended June 30, 2012. The firm reported second-quarter 2012 revenues of US$136.5 million with net income of US$11 million. Both figures are lower than second-quarter ...
Tags: LED
Physicists at The University of Texas at Austin,in collaboration with colleagues at Taiwan's National Tsing-Hua University and National Chiao-Tung University and at the Beijing National Laboratory for Condensed Matter Physics and Institute ...
Despite a cumulative silicon carbide (SiC) raw wafer and epiwafer market that will not exceed $80m in 2012, the body of related patents comprises more than 1772 patent families and over 350 companies since 1928, according to the report ...
Tags: Raw Material, Wafer
First production order comes from Solar Junction–in which the UK-headquartered wafer foundry has a$5M equity stake. Semiconductor wafer featuring multi-junction cells The advanced semiconductor epiwafer foundry IQE is to ...
Tags: IQE, Wafer Maker, CPV, Sharp
Epiwafer foundry and substrate maker IQE plc of Cardiff,Wales,UK has announced its first major orders for concentrating photovoltaic(CPV)wafers from Solar Junction Corp(SJC)of San Jose,CA,USA,which manufactures III-V multi-junction solar ...
Tags: IQE, Solar Junction, Multi-junctioncell, CPV
At the end of June,Riber S.A.of Bezons,France,which manufactures molecular beam epitaxy(MBE)systems as well as evaporation sources and effusion cells,completed the sale of a Compact 21 research MBE system to a research institute in Germany. ...
Tags: Riber, MBE, Compact 21, France, Germany
University of Notre Dame (UND) and IQE RF LLC of Somerset, NJ, USA have achieved record cut-off frequencies of 370GHz for InAlN/AlN/GaN/SiC high-electron-mobility transistors. The use of indium aluminum nitride (InAlN) barrier layers ...
Tags: Raw Material
Epiwafer foundry and substrate maker IQE plc of Cardiff,Wales,UK has completed its acquisition(announced on 5 June)of the entire in-house molecular beam epitaxy(MBE)epiwafer manufacturing unit of RF Micro Devices Inc of ...
5 June 2012 IQE acquires RFMD's MBE unit and secures seven-year wafer supply agreement Epiwafer foundry and substrate maker IQE plc of Cardiff,Wales,UK has signed what is described as a multi-faceted agreement to acquire the entire ...
Tags: IQE, RFMD MBE, GaAs, wireless semiconductor industry