Japan's Rohm Semiconductor has announced the availability of a new 1700V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) optimized for industrial applications, including manufacturing equipment and ...
Tags: SiC, MOSFET, manufacturing equipment
Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan has developed what is claimed to be the first 1.2kV-class power semiconductor device chip capable of large-current operation exceeding 20A. Picture: Forward current–voltage ...
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has announced the ...
Tags: GaN-on-Si, power transistor
STMicroelectronics of Geneva, Switzerland says that its silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) devices have enabled the ZapCharger Portable (claimed to be the world's smallest ...
Tags: transistor, Electric-Car Charger
In booth 9-242 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremburg, Germany (10–12 May), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including ...
Tags: Power Module, Gate Driver
Fabless high-temperature and and extended-lifetime semiconductor firm CISSOID of Mont-Saint-Guibert, Belgium has delivered the first prototypes of a three-phase 1200V/100A silicon carbide (SiC) MOSFET intelligent power module (IPM) to ...
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has introduced a ...
Rearchers in China claim the first radio frequency (RF) switch device based on indium gallium arsenide (InGaAs)-channel metal-oxide-semiconductor field-effect transistor (MOSFET) technology [Zhou Jiahui et al, J. Semicond. 2016, vol37, ...
Tags: InGaAs MOSFET RF switch
GE Aviation (an operating unit of GE) has been awarded a $2.1m contract from the US Army to develop and demonstrate silicon carbide (SiC)-based power electronics supporting high-voltage next-generation ground vehicle electrical power ...
Tags: GE Aviation, SiC power devices
X-FAB Silicon Foundries of Erfurt, Germany - a mixed-signal IC, sensor and micro-electro-mechanical systems (MEMS) foundry – has entered wide-bandgap semiconductor production by announcing the availability of silicon carbide (SiC) ...
Tags: SiC MOSFET SiC Schottky barrier diodes SiC power devices
Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...
Tags: Semiconductor Market, GaN, SiC
As part of its strategy to move more significantly into power semiconductors for industrial and automotive markets, Littelfuse Inc of Chicago, IL, USA has made an investment in silicon carbide (SiC) diode and MOSFET supplier Monolith ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices, Electrical
SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has launched an atomic layer deposition (ALD) system focusing on gate oxide ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced publication of the second ...
Tags: EPC, E-mode GaN FETs