Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has announced its entry into the monolithic microwave integrated circuit (MMIC) market. Building on ...
Tags: Microsemi MMIC, MMIC Market
Some says “if it can be made on Silicon, it will be made on silicon”. Is that true for GaN too? And if so, can it be applied in all GaN-based applications: LED, power, RF and laser?… Yole Développement (Yole) ...
Tags: GaN-on-Si, Power Electronics
The need for high-power, high-frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications, notes market research firm Yole Développement in its report ‘RF GaN Technology & ...
Toyota Motor Corporation, in collaboration with Denso Corp and Toyota Central R&D Labs Inc (CRDL), has developed a silicon carbide (SiC) power semiconductor for use in automotive power control units (PCUs). Toyota will begin test driving ...
Tags: Semiconductor, Automotive Power
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has introduced its new silicon carbide (SiC) MOSFET product family with new 1200V solutions. The new SiC ...
Japanese automaker Toyota Motor in association with Denso and Toyota Central R&D Labs has developed a new silicon carbide (SiC) power semiconductor for use in automotive power control units (PCUs). The new use of new semiconductor in ...
Tags: Toyota Motor, Hybrid Vehicles, Semiconductor
Cree Inc of Durham, NC, USA has added two new discrete 650V silicon carbide (SiC) rectifiers to its Z-Rec Schottky diode portfolio. Fabricated using Cree’s SiC technology, the C5D50065D and CVFD20065A are claimed to deliver ultrafast ...
Luxembourg-registered synthetic diamond materials firm Element Six (a member of the De Beers Family of Companies) says that its gallium nitride (GaN)-on-diamond wafers have been proven by Raytheon Company to significantly outperform ...
Tags: GaN-on-Diamond Wafers, GaN-on-SiC
Tokyo-based Mitsubishi Electric Corp has started shipping samples of new 1200V hybrid silicon carbide (SiC) power semiconductor modules for high-frequency switching applications. Featuring SiC diodes, the modules achieve high efficiency, ...
Tags: Mitsubishi Electric, SiC power modules, High-Frequency Switching
Cree Inc of Durham, NC, USA claims to have shattered the on-resistance barrier of traditional 1200V MOSFET technology by introducing the first commercially available silicon carbide (SiC) 1200V MOSFET with an RDS(ON) of 25mΩ in an ...
Tags: Cree SiC MOSFET, Electrical, Electronics
Cree Inc of Durham, NC, USA says that its silicon carbide (SiC) technology continues to enable smaller, lighter, more efficient and lower-cost power systems with a new all-SiC 300A, 1.2kV half-bridge module. Packaged in an industry-standard ...
Tags: Electrical, Electronics, Module
Dow Corning Corp of Midland, MI, USA, which provides silicon and wide-bandgap semiconductor technology, has introduced a product grading structure for silicon carbide (SiC) crystal quality that specifies new tolerances on killer device ...
LED chips are a core component in the LED industry. There are currently many domestic and international LED chip manufacturers in China, but there currently are no categorization standards, according to a report by Chinese-language ...
Tags: LED Industry, LED Chips
At the PCIM (Power Conversion Intelligent Motion) Europe 2014 conference in Nuremberg, Germany (20-22 May), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power ...
Tags: EPC E-mode GaN FETs GaN-on-silicon, Electrical, Electronics
Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...
Tags: GaN, MOCVD, Gallium Nitride Diodes