Dow Corning Corp of Midland, MI, USA, which provides silicones and silicon-based technology, has appointed Tang Yong Ang ('TY') as vice president of Dow Corning's Compound Semiconductor Solutions business, a provider of silicon carbide ...
Tags: Electrical, Electronics
At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2013) in Miyazaki, Japan (29 September to 4 October), SAMCO Inc of Kyoto, Japan, a supplier of etch, chemical vapour deposition (CVD) and surface treatment ...
Tags: Samco Etch, Electrical, Electronics
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has expanded its silicon carbide (SiC) Schottky diode product family with a new line of 650V solutions, ...
Tags: Electrical, Electronics
Many SiC-based substrate manufacturers exhibited 6-inch (150mm)-diameter wafers at ICSCRM 2013, an international conference on SiC-based power semiconductors, which took place from Sept 29 to Oct 4, 2013, in Miyazaki, Japan. Six-inch ...
Tags: SiC Wafers, Lighting
Researchers at Japan’s Ishinomaki Senshu University have developed a new photodiode that can detect in just milliseconds high-energy deep-ultraviolet (UVC) light, which is powerful enough to break the bonds of DNA and harm living ...
Tags: Gallium Oxide, Silicon Carbide, UVC Light
Showa Denko (SDK) is launching silicon carbide (SiC) epitaxial wafers with a diameter of 6 inches (150mm) - the largest size currently available, it is claimed - for use in power devices. The firm is also selling a new grade of 4-inch ...
Tags: Epiwafers, Inverter Power Devices
PVA TePla of Wettenberg, Germany has launched the baSiC-T physical vapor transport (PVT) crystal growth system (which uses sublimation of a source powder at high temperatures) for the mass production of silicon carbide (SiC) material. ...
Tags: PVT System, Modular
Tokyo-based Toshiba Corp has expanded its family of 650V silicon carbide (SiC) Schottky barrier diodes (SBD) with the addition of a 10A product to its existing line-up of 6A, 8A and 12A products (which operate with a forward voltage of 1.7V ...
Tags: Toshiba, Electrical, Electronics
ROHM Semiconductor of Santa Clara, CA (the US arm of system LSI, discrete components and module product maker ROHM Co Ltd of Kyoto, Japan) has launched two 80milliOhm 1200V silicon carbide MOSFETs, the SCT2080KE and SCH2080KE, designed to ...
Tags: Electrical, Electronics
RF Micro Devices Inc of Greensboro, NC, USA has introduced what it claims are the world's first 6-inch gallium nitride on silicon carbide (GaN-on-SiC) wafers for manufacturing RF power transistors for both military and commercial use. The ...
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which manufactures semiconductors, components, and subassemblies for RF, microwave and millimeter-wave applications) has launched a ceramic gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: GaN-on-Sic, Electronics
At the 2013 Electric & Hybrid Vehicle Conference & Expo in Novi, MI, USA (17-19 September), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless provider of gallium nitride (GaN)-based power switching semiconductors for power conversion ...
Tags: GaN Systems, Hybrid Vehicles
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has expanded its family of radio-frequency power transistors based on gallium nitride (GaN) ...
Tags: Microsemi, Electrical, Electronics
Divine Cycling Group is less than a year old but seems to have produced more gray hairs across the industry than a teenager. On Thursday the group announced some more major changes as it tries to get its footing after a tumultuous summer ...
Tags: Transportation, bike
LiqTech International Inc's silicon carbide (SiC) membranes are now National Sanitation Foundation (NSF) certified, making them approved for use in drinking water systems. The LiqTech membranes have been tested and certified by NSF ...