The UK's capacity in power electronics has received an £18m boost from the UK's Engineering and Physical Sciences Research Council (EPSRC) with the opening of the first EPSRC National Centre of Excellence for Power Electronics. As ...
Tags: Power electronics, Electrical, Electronics
Devices with wide-bandgap semiconductors will offer the greater competitive advantage in micro-inverters and small string inverters, reckons market analyst firm Lux Research. Wide-bandgap semiconductors – specifically, silicon ...
Tags: inverters, Electrical, Electronics
China-based researchers have reported that country's first diamond metal-semiconductor field-effect transistors (MESFETs) with RF characteristics [Feng ZhiHong et al, Science China Technological Sciences, vol56, p957, 2013]. The team was ...
Tags: Diamond MESFET MESFET Diamond, Electrical, Electronics
GT Advanced Technologies Inc of Nashua, NH, USA (a provider of polysilicon production technology as well as sapphire and silicon crystal growth systems and materials for the solar, LED and electronics markets) has introduced a silicon ...
Tags: Silicon, Electrical, LED, solar, electronics
United Silicon Carbide Inc (USCi) of Monmouth Junction, NJ, USA has selected the TCAD simulators of Silvaco Inc of Santa Clara, CA, a provider of technology computer-aided design (TCAD), circuit simulation and electronic design automation ...
Tags: Electrical, Electronics
Global Internet-based electronic components distributor Digi-Key Corp of Thief River Falls, MN, USA has agreed to act as exclusive distributor of the latest low-capacitance silicon carbide (SiC) Schottky rectifiers (launched earlier this ...
Tags: Digi-Key, GeneSiC SiC
In the 1990s Virgin and British Airways brought you the 'dirty tricks' scandal; this month Lighting brings you its very own corporate intrigue: Trollgate! We usually wouldn't bore you with the minutiae of publishing warfare but this ...
Integra Technologies Inc (ITI) of El Segundo, CA, USA, which makes high-power pulsed RF transistors, has developed two gallium nitride on silicon carbide (GaN-on-SiC) devices - the IGN1011M675 and the IGN1011M1200 - targeted at the L-band ...
Tags: GaN-on-SiC Devices, Integra
An Australian-UK consortium is offering a epitaxial silicon carbide buffer layer for 300mm silicon wafers, claiming it will improve gallium nitride growth for GaN-on-Si LED fabrication. The buffer is the result of over 10 years research ...
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, cable TV and industrial & scientific markets, has fully qualified its NPT1015 ...
Tags: RF Power Transistor, Nitronex
The Queensland Micro and Nanotechnology Facility (QMF) of Griffith University in Brisbane, Australia and its industry partner, plasma etch, deposition and thermal processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK, have ...
Tags: Silicon, Micro and Nanotechnology
Starting in late 2011, the power electronics downturn in 2012 was quite severe, exhibiting a 20% drop. The market suffered from the global economic downturn, combined with external factors such as China controlling what happened in some ...
UK-based etch, deposition and growth system maker Oxford Instruments Plasma Technology (OIPT), part of Oxford Instruments plc, has completed its series of Asian seminars in Beijing, China and Hsinchu, Taiwan, attracting a record total ...
Tags: OIPT, Electrical, Electronics
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has announced 15 new gallium nitride (GaN) amplifiers and transistors along with two new GaN processes – to be displayed in ...
Tags: TriQuint, Electrical, Electronics
LAST POWER (Large Area silicon-carbide Substrates and heTeroepitaxial GaN for POWER device applications), the European Union-sponsored program aimed at developing a cost-effective and reliable technology for power electronics, has announced ...
Tags: SiC, substrates GaN