Researchers at the Future Renewable Electric Energy Distribution and Management (FREEDM) Systems Center at North Carolina State University (NCSU) have used off-the-shelf silicon carbide (SiC)-based components to develop an inverter with ...
Tokyo-based equipment maker Disco Corp has developed the KABRA (Key Amorphous-Black Repetitive Absorption) laser ingot slicing method. Implementing the process is said to enable high-speed production of silicon carbide (SiC) wafers, ...
Tags: SiC, Disco Corp, laser ingot slicing method
Due to falling prices and the commercial availability of wide-bandgap (WBG) semiconductor power devices from multiple sources, the adoption of silicon carbide (SiC) and gallium nitride (GaN) power devices in power supplies for computers, ...
Tags: Semiconductor, GaN power devices
IXYS Corp of Milpitas, CA, USA and Leiden, The Netherlands, which provides power semiconductors and mixed-signal ICs for power conversion and motor control applications, has announced availability of its IXFN50N120SK and IXFN70N120SK 1200V ...
When the first SiC diode was launched in 2001, the industry questioned the future of the SiC power business: Will it grow? Is this a real business? But 15 years later, in 2016, people don't ask these questions anymore, since the SiC power ...
Tags: SiC Power, SiC device
Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...
Tags: Bipolar Transistor
STMicroelectronics of Geneva, Switzerland says that its silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) devices have enabled the ZapCharger Portable (claimed to be the world's smallest ...
Tags: transistor, Electric-Car Charger
In booth 9-242 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremburg, Germany (10–12 May), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes silicon carbide (SiC) power products including ...
Tags: Power Module, Gate Driver
In hall 9, booth 316 at PCIM (Power Conversion Intelligent Motion) Europe 2016 in Nuremberg, Germany (10-12 May), Japan's Rohm Semiconductor is showcasing its latest power products for high-speed switching and high-power performance, while ...
The US Department of Defense's Air Force Research Laboratory, Sensors Directorate, Devices for Sensing Branch (AFRL/RYDD) has issued a Request For Information (RFI) titled 'Development of Large Diameter Silicon Carbide Substrate and ...
GE Aviation (an operating unit of GE) has been awarded a $2.1m contract from the US Army to develop and demonstrate silicon carbide (SiC)-based power electronics supporting high-voltage next-generation ground vehicle electrical power ...
Tags: GE Aviation, SiC power devices
In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices
Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...
Tags: Semiconductor Market, GaN, SiC
Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...
Cree, a market leader in LED lighting, announced revenue of US $382 million for its fourth quarter of fiscal 2015, ended June 28, 2015. This represents a 12% decrease compared to revenue of $436 million reported for the fourth quarter of ...
Tags: Cree, LED lighting, Business Restructure