Energized by growing demand for power supplies, hybrid and electric vehicles, photovoltaic (PV) inverters and other established applications, the emerging global market for silicon carbide and gallium nitride power semiconductors will grow ...
Tags: GaN SiC Power electronics, power supplies, Electronics
Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) power devices, has introduced a new MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance in a configurable ...
Tags: configurable half-bridge circuit, MOSFET design, Electrical
Deposition equipment maker Aixtron SE of Aachen, Germany has teamed up with research institution Fraunhofer IISB (Institute for Integrated Systems and Device Technology) in Erlangen, Germany, to develop 150mm silicon carbide (SiC) epitaxy ...
Tags: Aixtron CVD SiC, Electrical, Electronics
Cree Inc of Durham, NC, USA says that its C2M, 1200V, 80mΩ silicon carbide (SiC) MOSFETs have been selected by Japan's Sanix Inc, to be designed into their new 9.9kW three-phase solar inverters for use in the construction of ...
Tags: Cree SiC MOSFET, Solar Inverters, Solar, Electrical, Electronics
Toshiba Corp’s Semiconductor & Storage Products Company has expanded its family of 650V silicon carbide (SiC) Schottky barrier diodes (SBDs) with the addition of insulated TO-220F-2L packaged products. Mass production shipment has ...
Tags: Toshiba, Semiconductor, Storage Products
Cree Inc of Durham, NC, USA says that its silicon carbide (SiC) technology continues to enable smaller, lighter, more efficient and lower-cost power systems with a new all-SiC 300A, 1.2kV half-bridge module. Packaged in an industry-standard ...
Tags: Electrical, Electronics, Module
Momentive Performance Materials Quartz Inc (MPM) has increased and expanded its manufacturing capacity of tantalum carbide coatings (TaC) in response to the growing demand for silicon carbide (SiC) power devices and the increased need for ...
With analysts predicting significant growth in the silicon carbide (SiC) power device market, in order to meet an anticipated spike in demand Japan’s Toshiba is expanding its family of 650V SiC Schottky barrier diodes (SBD). The ...
Tags: Toshiba, SiC Schottky
At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2013) in Miyazaki, Japan (29 September to 4 October), SAMCO Inc of Kyoto, Japan, a supplier of etch, chemical vapour deposition (CVD) and surface treatment ...
Tags: Samco Etch, Electrical, Electronics
Showa Denko (SDK) is launching silicon carbide (SiC) epitaxial wafers with a diameter of 6 inches (150mm) - the largest size currently available, it is claimed - for use in power devices. The firm is also selling a new grade of 4-inch ...
Tags: Epiwafers, Inverter Power Devices
Tokyo-based Toshiba Corp has expanded its family of 650V silicon carbide (SiC) Schottky barrier diodes (SBD) with the addition of a 10A product to its existing line-up of 6A, 8A and 12A products (which operate with a forward voltage of 1.7V ...
Tags: Toshiba, Electrical, Electronics
United Silicon Carbide Inc (USCi) of Monmouth Junction, NJ, USA has selected the TCAD simulators of Silvaco Inc of Santa Clara, CA, a provider of technology computer-aided design (TCAD), circuit simulation and electronic design automation ...
Tags: Electrical, Electronics
Uncertainty hangs over the market for power devices made with the wide-bandgap semiconductor silicon carbide (SiC), due to a lack of clarity over whether and when electric vehicles will adopt them, according to the latest study on the SiC ...
Tags: Electric Vehicle, Electronics, Power Devices
In anticipation of growing demand for industrial and automotive applications, Japan’s Toshiba Corp has started volume production of silicon carbide (SiC) power devices at its Himeji Operations–Semiconductor plant in Hyogo ...
Tags: SiC Power Devices, Toshiba
Toshiba has started volume production of silicon carbide (SiC) power devices at Himeji in the Hyogo Prefecture in anticipation of growing demand for industrial and automotive applications. Toshiba will manufacture Schottky Barrier Diodes ...
Tags: Toshiba, SIC, Electronics