China’s Xidian University has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, ...
Tags: HEMTs, InGaN channels
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has released a new Application Note for design engineers that sets ...
Tags: Gan Systems, E-Mode Power, Switching Transistors, Electrical
Modelithics Inc of Tampa, FL, USA, which provides RF and microwave active and passive simulation models for electronic design automation (EDA), has released the latest update to the growing library of high-accuracy non-linear simulation ...
Tags: Modelithics, RF, GaN
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has signed an agreement for Japanese company Daito Electron Co Ltd ...
Tags: GaN Systems, Daito Electron, Electrical
NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors
RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has introduced what are claimed to be the industry’s highest thermal and wideband performance GaN device with a 125W continuous wave (CW) gallium nitride on ...
Tags: Power Transistor, Electrical
Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced availability of a gate driver evaluation board and has expanded its design support for its SiC junction transistor (SJT, claimed ...
Tags: SiC Junction Transistors, Driver Evaluation Board, Electrical
Continuing strength in China and a resurgent US economy are combining to drive accelerated growth in the worldwide market for semiconductors used in industrial applications in 2014, according to IHS. Global market revenues for industrial ...
Tags: industrial semiconductors, Global market revenues, Lights
The market for discrete power electronics components – used to convert and manage electricity in devices ranging from mobile phones to pumps and motors – will grow by 77% from $13bn today to $23bn in 2024, according to the ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC2101, a 60V ...
Researchers have demonstrated how noise in a microwave amplifier is limited by self-heating at very low temperatures (J Schleeh et al, ‘Phonon black-body radiation limit for heat dissipation in electronics’, Nature Materials, 10 ...
Tags: Microwave Amplifier, transistor
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless producer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, is exhibiting at the Electronica 2014 trade fair in Munich, Germany ...
Tags: GaN Systems, semiconductors
Japan’s National Institute of Advanced Industrial Science and Technology (NAIST) has claimed the highest breakdown voltage to date for a diamond metal-semiconductor field-effect transistor (MESFET) [Hitoshi Umezawa et al, IEEE ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC9118, a fully ...
Tags: Buck Converter, Demo Board
Texas Instruments (TI) (NASDAQ: TXN) today introduced the industry's first fully integrated high-brightness LED matrix manager IC for adaptive automotive headlight systems. The TPS92661-Q1 is a compact, scalable solution that enables ...
Tags: TI, Matrix Manage, Accessories