After the RF Power business of NXP Semiconductors N.V. was acquired by China's Jianguang Asset Management Co Ltd (JAC Capital), the newly created firm Ampleon of Nijmegen, The Netherlands has extended its portfolio of gallium nitride (GaN) ...
Tags: Ampleon, GaN RF Power Transistor, broadband
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced publication of the second ...
Tags: EPC, E-mode GaN FETs
University of Cyprus, Cyprus University of Technology, and University of Crete have been exploring the potential of Frster resonant energy transfer (FRET) from an indium gallium nitride (InGaN) single quantum well (SQW) to a light-emitting ...
Tags: InGaN, InGaN quantum well, FRET
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has received two orders for research MBE machines. The Fraunhofer HHI (Heinrich Hertz Institute) in ...
Researchers in Germany are proposing scandium nitride (ScN) as a suitable buffer for gallium nitride (GaN) on silicon (Si) growth [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, 2015]. The attraction of ScN is a very small mismatch ...
Tags: GaN devices, microscope
The main challenge of growing gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) on silicon substrates is the lattice mismatch between GaN and AlGaN that causes a high tensile stress and often leads to cracks. Now, by ...
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has launched a line of full-visible-spectrum LED 230V large lamps. From narrow spot to ...
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Taiwan Semiconductor Manufacturing Corporation (TMSC, the ...
Tags: GaN Systems, E-mode GaN FETs, TSMC
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that, to support its accelerating ...
Tags: EPC, GaN, semiconductors
Electronic hardware and software design solutions provider Mentor Graphics Corp of Wilsonville, OR, USA says that Xiamen San'an Integrated Circuit Co Ltd (San'an IC) of Xiamen Torch High-tech Industrial Development Zone, China has selected ...
Tags: San'an, Mentor Graphics, GaAs
Plextek RF Integration of Great Chesterford, near Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, says that on 3 December at 18:00GMT (10:00PT/13:00ET/19:00CET) its CEO Liam Devlin is presenting ...
Tags: Plextek, GaN Transistors, GaN transistor
Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...
Tags: AlGaN, Ultraviolet photodetectors, HVPE
Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
Teledyne Microwave Solutions Inc of Mountain View, CA, USA (TMS, a business unit of Teledyne Technologies Inc) has launched a line of gallium nitride (GaN)-based wideband amplifiers that is claimed to further lower the form factor threshold ...
Tags: TMS, GaN amplifiers