Spending on RF high-power semiconductors for the wireless infrastructure markets has flattened out this year, despite the fact that the overall market hit well over $1.5bn in 2015, according to ABI Research's report 'RF Power ...
Tags: High-Power Semiconductor, GaN
Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications) says that its infrastructure solutions have supported more than twenty 5G ...
Tags: Qorvo, Infrastructure Providers
LED maker Kingbright Co LLC City of Industry, CA, USA has launched what it claims is the industry's smallest SMD LED, the HELI-UM series. The 0.65mm x 0.35mm x 0.20mm (0201) footprint of the HELI-UltraMiniature allows it to fit into ...
Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...
The University of Manchester and the University of Cambridge in the UK have been comparing efficiency droop in low-temperature photoluminescence (PL) experiments on non-polar m-plane and polar c-plane indium gallium nitride (InGaN) quantum ...
Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched what it claims is the fastest gallium nitride (GaN) ...
Tags: Peregrine, GaN FET Driver
Infineon Technologies AG of Munich, Germany has entered into a definitive agreement to acquire the Wolfspeed Power & RF division of Cree Inc of Durham, NC, USA for $850m in cash (about €740m). The deal also includes the related silicon ...
Plextek RFI Ltd of Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, has announced a new reference design for a gallium nitride (GaN) power amplifier (PA) monolithic microwave integrated circuit ...
Tags: MMICs, microwave, millimeter-wave modules
The US Army Research Laboratory (ARL) has entered into a collaborative alliance via a $1.1m grant with Raytheon Company of Waltham, MA, USA to develop Scalable, Agile, Multimode, Front End Technology (SAMFET) for the Army's Next Generation ...
Tags: ARL, next-generation radar systems
Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan has developed what is claimed to be the first 1.2kV-class power semiconductor device chip capable of large-current operation exceeding 20A. Picture: Forward current–voltage ...
Airbus Defence and Space, which is reckoned to be the world's second largest space company (and a division of Airbus Group, Europe's top defence and space enterprise), has won its third contract in 18 months for its latest gallium nitride ...
Tags: GaN HEMT, SSPAs, Navigation Satellites
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that optoelectronics manufacturer Xiamen Changelight Co Ltd of Xiamen, Fujian Province, China has finalized qualification of its AIX R6 Close Coupled ...
Tags: Aixtron SE, Changelight, MOCVD
At a ceremony at the UK Engineering and Physical Sciences Research Council (EPSRC) National Centre for Power Electronics Annual Conference 2016 in Nottingham, UK, a post-graduate team from Imperial College London received the £2000 ...
Tags: GaN Systems, power conversion
Aluminium gallium nitride (AlGaN) buffer layers with high aluminium content are necessary for optimal UV-C LED performance. But their band-edge lies below 300nm, so established 405nm in-situ reflectance is insensitive to the surface ...
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers, says that on 7 June it received official notification from the International ...