IBM Research's Thomas J. Watson Research Center and Northwestern University have developed a technique to grow hexagonal- and cubic-phase gallium nitride (h-/c-GaN) on standard (100) silicon (Si) [Can Bayram et al, Adv. Funct. Mater., ...
The US Defense Advanced Research Projects Agency (DARPA) says that missions in remote, forward operating locations often suffer from a lack of connectivity to tactical operation centers and access to valuable intelligence, surveillance and ...
Tags: GaN E-band MMICs, vehicles, Electrical, Electronics
According to the report 'Gallium Nitride (GaN) Semiconductor Devices (Discrete & IC) and Substrate Wafer Market by Technology, Application, Product, Device, & by Geography - Forecast & Analysis to 2013–2022' from MarketsandMarkets, ...
Tags: semiconductor, Electrical, Electronics
Deposition equipment maker Aixtron SE of Aachen, Germany says that Jiangsu Trifortune Electronic Technology Co Ltd of Jintan City, China has ordered an AIX G5 HT metal-organic chemical vapor deposition (MOCVD) system to develop gallium ...
Tags: Aixtron MOCVD, LED
Singapore's Nanyang Technological University has developed conventional aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) with record-breaking figures-of-merit (FOMs) for frequency and breakdown performance [Kumud ...
Tags: Electrical, Electronics
Ammono S.A. in Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, and the Institute of High Pressure Physics of the Polish Academy of Sciences (Unipress) say they have conceived proprietary new ...
Raytheon Company of Waltham, MA, USA says that it has achieved another milestone for next-generation gallium nitride (GaN) radio-frequency (RF) semiconductor technology. Through the US Defense Advanced Research Projects Agency (DARPA) Near ...
Tags: GaN-on-Diamond, GaN-on-SiC
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has delivered the first 200mm (8") gallium nitride-on-silicon wafers (GaN-on-Si) into the Singapore-MIT Alliance for Research and Technology Center's Low Energy Electronic ...
Tags: IQE GaN-on-Si III-V-on-silicon CMOS, Electrical, Electronics
The firm will use the funds to add to its product portfolio, team, and strategic partnerships. Most of the new funding comes from new investors. A new investor led the round, with participation from existing shareholders including ...
At the 39th annual Government Microcircuit Applications and Critical Technology (GOMACTech 2014) conference in Charleston, SC, USA (3 April), Alex Lidow, CEO & co-founder of Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, ...
Tags: DC-DC Converter, EPC
Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...
Tags: InGaN LEDs, Silicon, semiconductor
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has launched a full range of LED AR111, PAR30 and PAR38 lamps that will be ...
Tags: Soraa, GaN-on-GaN, LED product
RF Micro Devices Inc of Greensboro, NC, USA has signed a $9.7m agreement with the Manufacturing and Industrial Technologies Directorate within the US Air Force Research Laboratory (AFRL) to transfer and produce a 0.14μm gallium nitride ...
Tags: RF Micro Devices, GaN technology
Researchers in France have reported on solar cell devices based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [Sirona Valdueza-Felip et al, Appl. Phys. Express, vol7, p032301, 2014]. Conversion efficiencies of up to 2% ...
Tags: Solar Cells, InGaN
Martini Tech Inc of Tokyo, Japan has started to offer a new gallium nitride (GaN) metal-organic chemical vapour deposition (MOCVD) service on sapphire substrates for LED applications. Founded in 2013, Martini Tech offers microfabrication ...