Tokyo-based semiconductor manufacturer Toshiba Corphas announced the first devices in its second generation of LETERAS white LEDs fabricated using a gallium nitride-on-silicon (GaN-on-Si) process. Scheduled for mass production in November, ...
Tags: Toshiba, GaN-on-Si LEDs
New 1W GaN-on-Si LEDs break the 100 lm/W level in warm white with Toshiba stating that volume production will begin in November 2013. Toshiba Electronics Europe has announced a second-generation of the company's high-power ...
Tags: Toshiba, Silicon-Based LEDs
Markets for pulsed RF power devices up to 18GHz are expected to show continued solid growth over the next five years - exceeding $250m by 2018 - despite the current economic turmoil and cuts in defense spending, according to the study ...
Tags: ABI RF power semiconductors GaN, Electrical, Electronics
LayTec AG of Berlin, Germany, which makes in-situ metrology systems for thin-film processes focusing on compound semiconductor and photovoltaic applications, says that Epistar Corp (Taiwan's largest LED chipmaker) has qualified the Pyro 400 ...
Tags: LED, Electrical, Electronics, semiconductor, photovoltaic applications
In booth 608 at the Society of Cable Telecommunications Engineers (SCTE) Cable-Tec Expo 2013 in Atlanta (22-24 October), broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has announced that it ...
Tags: Anadigics, Amplifier, Electrical, Electronics
ARPA-E Deputy Director Cheryl Martin today announced $27 million in funding from the Energy Department’s Advanced Research Projects Agency-Energy (ARPA-E) for 14 projects aimed at developing next-generation power conversion devices ...
At the SCTE Cable-Tec Expo in Atlanta (21-24 October), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has launched the first two members of its cost-effective TriAccess ...
Tags: TriQuint, Gan Amplifiers, Electrical, Electronics
ARPA-E deputy director Cheryl Martin has announced $27m in funding from the US Department of Energy's (DOE) Advanced Research Projects Agency-Energy (ARPA-E) for 14 projects aimed at developing next-generation power conversion devices that ...
Tags: Electrical, Electronics
RF Micro Devices Inc of Greensboro, NC, USA has unveiled its first power doubler amplifier in a multi-chip module to support the requirements of the new data over cable service interface specification (DOCSIS) 3.1. RFMD says that its new ...
Tags: Cable, RFMD, Electrical, Electronics
China-based chip maker San'an Optoelectronics Co Ltd is projected to take the lead in gallium nitride (GaN) LED wafer capacity by the end of 2014, overtaking current leader Epistar Corp of Taiwan, according to market research firm IHS Inc. ...
Tags: LEDs, Electrical, Electronics, Optoelectronics
Hong Kong University of Science and Technology (HKUST) has developed a 600V gallium nitride on silicon (GaN/Si) normally-off metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with large gate swing and low current ...
Tags: GaN MIS-HEMTs AlGaN, Electrical, Electronics
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has launched what it claims is the first line of high-color-rendering LED MR16 GU10 120V ...
Tags: LED Lamps, LED, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced devices with a high-lead solder termination for applications requiring higher temperature solder.?The EPC2801, EPC2815, and EPC2818 feature high-lead content (95% ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
Japan's Shimadzu Corp has developed a blue direct diode laser (DDL), providing what is claimed to be industry-leading brightness levels. The 10W-type laser is being exhibited at InterOpto 2013 at Pacifico Yokohama, Japan (16-18 October). ...
Tags: Blue laser diode, Electrical, Electronics
Singapore’s Nanyang Technological University (NTU) has developed a passivation process for aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on silicon substrates that significantly ...
Tags: Nitride HEMTs, Electrical