Rubicon Technology Inc of Bensenville, IL, USA, which makes monocrystalline sapphire substrates and products for the LED, RFIC, semiconductor and optical industries, says that the United States Patent and Trademark Office (USPTO) has ...
Tags: Technology, LED, semiconductor
Researchers in South Korea have developed a new gold-doping process for graphene transparent conducting layers (TCLs) that improves its adhesion and electrical contact with near-ultraviolet light-emitting diodes (NUV-LEDs) [Chu-Young Cho et ...
Tags: NUV-LEDs GaN Graphene, Electrical, Electronics, LED
AIXTRON SE announced that China’s Peking University is adding to its AIXTRON equipment base with an order for a further Close Coupled Showerhead (CCS) reactor with capacity for three 2-inch (3x2”) substrates in a single run. The ...
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in Q2/2012 China's Peking University ordered a further Aixtron Close Coupled Showerhead (CCS) reactor with capacity for three 2-inch (3x2") substrates in a single run. ...
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has received the ‘red dot award: product design 2013’ for its ...
Tags: Soraa, GaN-on-GaN, LED Mr16 Lamp
Samsung Electronics Co. Ltd. has gotten involved in a patent infringement with Boston University in the U.S. District Court for the District of Massachusetts. Boston University alleges that Samsung “regularly and deliberately” ...
Tags: LED devices, LED, Samsung
Startup makes LEDs on 8-in silicon substrates using microwire technology and has received a EUR 10 million investment to commercialize the technology. Aledia has announced that it has successfully transferred its microwire ...
Tags: silicon LEDs, LED technology, LED
Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) materials and related products and services, has completed its initial investigation ...
Tags: Kyma, Electrical, Electronics, crystalline gallium nitride
The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...
Arkansas Power Electronics International Inc (APEI) of Fayetteville, AR, USA, a developer of technology for power electronics systems, electronic motor drives and power electronics packaging, and GaN Systems Inc of Ottawa, Ontario, Canada, ...
Tags: APEI, GaN Systems, Electronics
APEI and GaN Systems have developed a 1MHz gallium nitride power dc-dc boost converter delivering 5kW at 98.5% efficiency. GaN power transistors are lightning fast, have low on-resistance, and are been proposed for converters working ...
Tags: Consumer Electronics, Electronics
A major challenge of in-situ metrology on single-port reactors with small viewport geometries is the combination of curvature measurements (by blue laser) with reflectance measurement at a wavelength of 405nm, says LayTec AG of Berlin, ...
Tags: LayTec, blue laser, reflectance measurement
Researchers in Japan have been developing planarization techniques for gallium nitride (GaN) surfaces [Shun Sadakuni et al, Jpn. J. Appl. Phys., vol52, p036504, 2013]. The researchers from Osaka University, Ritsumeikan University and Ebara ...
UK-based etch and deposition system maker Oxford Instruments Plasma Technology (OIPT), a division of Oxford Instruments, has announced an evolution in batch etch technology with the launch of its PlasmaPro1000 Astrea etch system, a large ...
Tags: Oxford Instruments, HB-LED Production, Plasma Technology
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has introduced the EPC9010 development board to make it easier for engineers to start designing with a 100V enhancement-mode gallium nitride (eGaN) field-effect transistor (FET) ...
Tags: EPC, Power Conversion, eGaN FETs