Bridgelux and Toshiba announce 8-inch GaN-on-silicon LEDs Siu Han, Taipei; Alex Wolfgram, DIGITIMES [Wednesday 30 May 2012] Bridgelux and Toshiba recently announced that the two companies have achieved 8-inch GaN-on-silicon LED chips that ...
According to a market research report published by Strategies Unlimited (SU), the high-brightness (HB) LED market, experienced a 93 percent growth rate between 2009 and 2010. In 2009, the global market for packaged HB LEDs was $5.6 billion. ...
Tags: Sapphire Wafer
Germany increases focus on infrastructure,LED lighting 26 Jun Germany has invested in SSL in automobiles and street lights,and now broader investments are being encouraged to build a larger SSL manufacturing base.Hella research says LED ...
Tags: Germany, LED lighting
The 2012 Lighting Year began with the historic phase-out of the incandescent light bulb. The year continued with the 50th anniversary of the light-emitting diode (LED) in October and ended in December with yet another Greatest LED. ...
Tags: Philips, LED, LED lamp, LED Lighting, OsramNXP Cree
The 2012 Lighting Year began with the historic phase-out of the incandescent light bulb. The year continued with the 50th anniversary of the light-emitting diode (LED) in October and ended in December with yet another Greatest LED. ...
Tags: Philips LED, LED lamp, LED Lighting, OsramNXP Cree
Light output power increased 23% over conventional lateral LEDs. Korea's universities have used aluminum-alloyed graphite as a thermally conducting substrate to improve the light output power performance of nitride semiconductor LEDs by ...
Tags: LED
Power+Energy Inc(P+E)of Ivyland,PA,USA,which provides palladium-membrane-based hydrogen purifiers for the compound semiconductor and energy industries,for Gallium Nitride at the University of Cambridge.The micro-channel palladium purifier ...
AIXTRON SE introduced a 5 x 200mm gallium nitride on silicon (GaN-on-Si) reactor design for its G5 Planetary Reactor metal organic chemical vapor deposition (MOCVD) platform. AIX G5+ comprises special reactor hardware and process design, ...
Tags: MOCVD
Seoul Semiconductor claims 5x brightness with non-polar LEDs 10 Jul 2012 Seoul Semiconductor has announced that it will introduce LEDs based on non-polar technology,which it claims will deliver over 5x the lumens per unit area of ...
Scientists at the Fraunhofer Institute for Solar Energy Systems ISE in Freiburg, Germany have successfully tested power transistors made of gallium nitride (GaN) in power electronic systems. By using such transistors the researchers says ...
Tags: Fraunhofer, ISE, GaN, power transistor
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, says that its GaN-on-GaN LED MR16 Vivid and Outdoor lamps have been recognized ...
Tags: Soraa, LEDs, GaN, lighting technology
Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive based on ...
Tags: Bulk GaN, traditional silicon, gallium nitride, reckons market
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has received a$2.7m contract from the Defense Advanced Research Projects Agency(DARPA)to triple the power handling performance of ...
University of California,Santa Barbara(UCSB)has demonstrated for the first time nonpolar m-plane(10-10)nitride semiconductor vertical-cavity surface-emitting laser(VCSEL)diodes[Casey Holder et al,Appl.Phys.Express,vol5,p092104,2012]. The ...
Tags: nitride semiconducto, VCSEL, electrical
Plessey Semiconductors Ltd of Plymouth, UK says that its new MAGIC (MAnufactured on GaN ICs) High Brightness LEDs (HB-LEDs) have won the Solid-State Lighting Application Category of the Elektra Awards 2012. The winners were announced at the ...