GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched the latest addition to its range of enhancement-mode ...
Tags: GaN Systems, Power electronics
Qorvo Inc, a provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, has launched a family of gallium nitride (GaN) power amplifiers (PAs) that are said to dramatically improve the ...
Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA, a provider of RF solutions for mobile, infrastructure and aerospace/defense applications, has launched a family of hybrid gallium nitride (GaN)/gallium arsenide (GaAs) power amplifiers ...
Tags: Power Amplifier, Qorvo
RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has launched two ultra-wideband RF power gallium nitride (GaN) transistors in new plastic packages. "The industry-leading bandwidth of these two products will enable ...
Tags: GaN Transistors, Plastic Packages
Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices as well as LEDs, has submitted a draft registration statement on a confidential basis to the US Securities and Exchange Commission ...
Tags: silicon carbide, gallium nitride, LEDs
Diamond Microwave Devices Ltd of Leeds, UK (which was spun out in 2006 from the diamond electronics team of Element Six and specializes in high-performance microwave power amplifiers) has re-designed its range of gallium nitride (GaN)-based ...
Panasonic Corp of Osaka, Japan is launching what it claims is the industry's smallest enhancement-mode (E-mode) gallium nitride (GaN) power transistor, encapsulating into an 8x8 dual-flat no-lead (DFN) 'X-GaN' surface-mount package. A ...
Tags: Panasonic, GaN Power Transistor
Cree Inc of Durham, NC, USA has launched two gallium nitride (GaN) high-electron-mobility transistor (HEMT) RF devices that are said to solve a number of long-standing issues for radar systems employing traditional travelling wave tube ...
Tags: GaN HEMTs, TWT Amplifiers
Modelithics Inc of Tampa, FL, USA, which provides RF and microwave active and passive simulation models for electronic design automation (EDA), and Qorvo Inc (a provider of core technologies and RF solutions for mobile, infrastructure and ...
Tags: Modelithics, passive simulation models, electronic design
In booth #1348 at the 2015 IEEE MTT-S International Microwave Symposium & Exhibition (IMS 2015) in Phoenix, Arizona (17-22 May), Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated ...
Tags: Microsemi, Microwave Devices
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched its fourth generation of gallium nitride on ...
Tags: GaN Technology, silicon carbide
Broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, US is shipping production volumes of its ACA1216 surface-mount line amplifier to Applied Optoelectronics Inc's China subsidiary Global Technology, ...
Tags: Anadigics, CATV Infrastructure
Researchers in USA and Saudi Arabia have been producing 610nm-wavelength red lasers with III-nitride nanowires (NWs) grown on silicon [Shafat Jahangir et al, Appl. Phys. Lett., vol106, p071108, 2015]. With a view to plastic fiber optical ...
Tags: plastic fiber, Electronics
Researchers in Korea and USA have developed sidewall emission-enhanced (SEE) deep ultraviolet (DUV) light-emitting diodes (LEDs) to improve light extraction efficiency DUV LEDs with wavelengths less than 300nm become very inefficient due ...
Tags: Light-Emitting Diodes, LEDs
Monolithic microwave integrated circuit (MMIC) developer Custom MMIC of Westford, MA, USA added to its standard product catalog by launching a gallium nitride (GaN) low-noise amplifier (LNA) housed in a leadless 4mm x 4mm ceramic package ...