Spurred by new technology and architectures, very small aperture terminal (VSAT) applications are evolving from enterprise connectivity and video to competitive wireless broadband alternative, notes the Strategy Analytics Advanced ...
Kyma Technologies Inc of Raleigh, NC, USA (which provides crystalline nitride materials, crystal growth and fabrication equipment, and power switching electronics) and Quora Technology Inc have announced a strategic partnership in the ...
Tags: Kyma technologies, GaN, Quora
BluGlass Ltd of Silverwater, Australia – which was spun off from the III-nitride department of Macquarie University in 2005 to develop a low-temperature process using remote plasma chemical vapor deposition (RPCVD) to grow materials ...
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
Researchers based in Taiwan and USA have increased the modulation bandwidth of indium gallium nitride (InGaN) light-emitting diodes (LEDs) [Jin-Wei Shi, IEEE Electron Device Letters, published online 26 May 2016]. The enhanced bandwidth was ...
Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...
In booth 10.2/L36 at the ANGA COM 2016 Exposition & Congress for Broadband, Cable and Satellite in Cologne, Germany (7-9 June), Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for ...
Tags: Qorvo, CATV, MCM Amplifiers
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has announced the ...
Tags: GaN-on-Si, power transistor
Plessey of Plymouth, UK has entered into a distribution agreement for the UK and Ireland with Newbury-based Freeway Lighting, an electronics distributor and provider of advanced lighting solutions. "We specialize in the distribution of ...
Tags: Plessey, Freeway Lighting
Diamond Microwave Devices Ltd of Leeds, UK (which specializes in high-performance microwave power amplifiers) has launched a range of X-band gallium nitride (GaN)-based pulsed solid-state power amplifiers (SSPA) offering integrated ...
Tags: GaN-on-diamond, radar application
At the PCIM (Power Conversion Intelligent Motion) Europe 2016 event in Nuremberg, Germany (10-12 May), Panasonic Automotive & Industrial Systems Europe showcased its technology lineup, highlighting innovations including passive components, ...
Tags: GaN power devices, SiC
RJR Technologies Inc of Oakland, CA, USA, a developer and high-volume manufacturer of air-cavity plastic (ACP) semiconductor packaging for RF and microwave markets, has shipped over 10 million ACP packages, reflecting the increasing use of ...
UK-based Cobham has launched a scalable family of gallium nitride (GaN) solid-state transmitter solutions. SOLSTx (pronounced 'solstice') is optimized for ground, maritime and airborne applications including air-traffic control, weather, ...
Tags: Radar Transmitters, Cobham
MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has launched the MAGe-102425-300, a 300W gallium ...
Tags: MACOM, semiconductors, photonic applications
Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate