Tokyo-based Mitsubishi Electric Corp has developed a gallium nitride high-electron-mobility transistor (GaN HEMT) offering high output power and efficiency for use in base transceiver stations (BTS) operating in the 3.5GHz band for ...
Tags: Mitsubishi Electric, GaN HEMT
Cree Inc of Durham, NC, USA has introduced a 25W gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) for 6–12GHz performance. Leveraging the inherent benefits of GaN technology, the new MMIC enables extremely wide ...
Tags: integrated circuit, GaN technology
Texas Instruments Inc (TI) has introduced what it claims is the first 80V, 10A integrated gallium nitride (GaN) field-effect transistor (FET) power-stage prototype, consisting of a high-frequency driver and two GaN FETs in a half-bridge ...
Tags: GaN FETs, transistor
Skysilicon Co Ltd of Chong Qing City, China (which makes discrete power devices and power ICs, MEMS sensors and compound semiconductor devices) has released what is reckoned to be China's first gallium nitride (GaN) power device ...
Tags: GaN-on-Si MISHEMTs, Electronics
After two tough years of stagnation, in 2014 the power semiconductor device market returned to growth, rising by 8.4% to $11.5bn, according to the report 'Status of the Power Electronics Industry (February 2015 edition)' from Yole ...
Zhejiang University in China and University of Cambridge in the UK have jointly developed ultraviolet light-emitting diodes (UV-LEDs) based on metal-semiconductor Schottky junctions between silver nanowires (AgNWs) and gallium nitride (GaN) ...
LED chip and component maker SemiLEDs Corp of Hsinchu, Taiwan has announced sampling and volume availability of its phosphor-converted (PC) LED chip series. The series launches with PC Amber, PC Green and PC Red LED chips in a 40mil (1mm ...
Deposition equipment maker Aixtron SE of Aachen, Germany says that Taiwanese group Episil Semiconductor Wafer Inc has put into operation an AIX G5 WW (Warm-Wall) chemical vapor deposition (CVD) reactor for silicon carbide (SiC) epitaxy. ...
Tags: silicon components, Electronics
A Mayer and A Bay of University of Namur in Belgium have applied a 'genetic algorithm' to the problem of finding optimal surface textures for light extraction from gallium nitride (GaN) light-emitting diodes (LEDs) [Journal of Optics, ...
The US government has given approval for Raytheon Company of Waltham, MA, USA to export a gallium nitride- (GaN)-based Active Electronically Scanned Array (AESA) Patriot sensor to Patriot Air and Missile Defense System partner nations. ...
Tags: Patriot Radar, AESA Sensor
Osram Opto Semiconductors GmbH of Regensburg, Germany claims that it has achieved one of the best values in the world in terms of forward voltage for blue high-current chips, leading to an increase in efficiency of up to 8%. Optimized ...
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has launched a small, low-profile series of light engines that provide fixture ...
Tags: LED technology, Optical Light
Researchers in Korea have used spin-coated silver nanowires (Ag NWs) to improve the performance of indium gallium nitride light-emitting diodes (InGaN LEDs) [Gyu-Jae Jeong et al, Appl. Phys. Lett., vol106, p031118, 2015]. The team based at ...
Tags: Spin-Coating, InGaN LEDs
Revenue for gallium nitride (GaN) RF devices in both military and commercial applications will grow at a compound average annual growth rate (CAAGR) of more than 20% to nearly $560m in 2019, according to the Strategy Analytics Advanced ...
Tags: GaN RF Device, GaN RF Market
Qorvo Inc, a provider of core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications, has reported December-quarter financial results for both RF Micro Devices Inc of Greensboro, NC, USA and TriQuint ...
Tags: core technologies, solutions, Electrical