RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA says that RF-Lambda of San Diego, CA, USA, which makes and distributes RF components for analog wireless networks in North America, ...
Northrop Grumman Corp of Redondo Beach, CA, USA has developed two new 0.1μm gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) broadband three-stage high-power amplifiers ...
Tags: Northrop Grumman, High-Power MMICs
Freescale Semiconductor of Austin, TX, USA, which provides RF power technology for cellular markets, has announced a major initiative focused on demonstrating how its new and existing commercial RF power and microwave RF devices can meet ...
Tags: Freescale, Electrical
Cree announced that it had shipped more than two million GaN high electron mobility transistors (HEMT) for cellular telecommunications and provided game-changing benefits over traditional silicon-based technologies, involving higher power, ...
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp – has expanded its gallium nitride high-electron-mobility transistor (GaN HEMT) lineup with the addition of three new ...
Tags: Toshiba, Satcom Market
Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp - has added a 200W C-band gallium nitride (GaN) high-electron-mobility transistor (HEMT) to its power amplifier product family. ...
Tags: Toshiba, Power Amplifier
Avago Technologies Ltd of San Jose, CA, USA and Singapore, a supplier of analog interface components for wireless, wireline and industrial applications, has announced two RF power amplifiers (PAs), the MGA-43728 and MGA-43828, and a WiFi ...
Tags: Small-Cell Base, Electrical
Cree Inc of Durham, NC, USA says it has now surpassed the milestone of shipping more than 2 million gallium nitride (GaN) high-electron-mobility transistors (HEMTs) for cellular telecommunications, providing benefits over traditional ...
Tags: Cree, Telecom Infrastructure
GigOptix Inc of San Jose, CA, USA (a fabless supplier of analog semiconductor and optical communications components enabling high-speed end-to-end information streaming over optical fiber and wireless networks) says that it has demonstrated ...
Tags: GigOptix, Electrical, Electronics
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has introduced a new style of RF power amplifier (PA) optimized to power 3G and 4G small-cell base-stations. Paired with digital or ...
Tags: Anadigics, Electrical, Electronics
In booth 2507 at the 2013 IEEE MTT-S International Microwave Symposium (IMS) in Seattle, WA, USA (4-6 June), GigOptix Inc of San Jose, CA, USA (a fabless supplier of analog semiconductor and optical communications components enabling ...
Tags: GigOptix, Electrical
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has launched a new family of 802.11ac power amplifiers (PAs) optimized for WiFi infrastructure and multimedia applications, including ...
Tags: Anadigics, Electrical
Synthetic diamond materials firm Luxembourg-registered Element Six (part of the De Beers Family of Companies, and co-owned by Belgian materials group Umicore) has acquired the assets and intellectual property of Group4 Labs Inc of Menlo ...
Tags: diamond materials, Electronics
For first-quarter 2013, Rubicon Technology Inc of Bensenville, IL, USA (which makes monocrystalline sapphire substrates and products for the LED, RFIC, semiconductor and optical industries) has reported revenue of $8.3m, down 18.6% on ...