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Northrop Grumman Has Developed Two New 0.1 Gallium Arsenide
Jun 17, 2013Northrop Grumman Corp of Redondo Beach, CA, USA has developed two new 0.1μm gallium arsenide (GaAs) high-electron-mobility transistor (HEMT) monolithic microwave integrated circuit (MMIC) broadband three-stage high-power amplifiers ...
Tags: Northrop Grumman, High-Power MMICs