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Sanan IC Extends III-V Foundry From Greater China to North American, European and APAC Markets

Aug 27, 2018

Sanan Integrated Circuit Co Ltd (Sanan IC) of Xiamen City, Fujian province (China’s first 6-inch pure-play compound semiconductor wafer foundry) has announced its entry into the North American, European and Asia Pacific (APAC) markets ...

Tags: integrated passive device, filters

Continental and CITC Partner on Hybrid Battery Systems

Mar 12, 2018

German automotive manufacturing firm Continental has agreed to establish a joint venture (JV) with China’s CITC to manufacture 48-volt battery systems. The companies, via their respective subsidiaries, will set up the JV for the ...

Tags: automotive, Continental

HPMJ's Emergency Power Solution Are Well-Received in Global Market

Mar 12, 2018

The Taiwan-based HPMJ Co., Ltd. is a professional manufacturer of lead-acid battery-based products such as emergency power supplies for vehicles and energy storage battery packs for solar power installation. Dai Jian-lang, owner of HPMJ, ...

Tags: acid battery, HPMJ's products

ON Semiconductor Extends Sic Diode Portfolio by Adding 650V Schottkys

Mar 2, 2018

ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has extended its silicon carbide (SiC) diode portfolio by ...

Tags: sensors, analog

Panasonic Develops Insulated-Gate MIS GaN Power Transistor Capable of Continuous Stable Operation

Feb 24, 2018

Panasonic Corp of Osaka, Japan has developed an insulated-gate metal-insulator-semiconductor (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no variation in its threshold gate voltage. This makes it ...

Tags: Panasonic, Power Transistor

Toshiba Adds Second-Generation 650V SiC Schottky Barrier Diodes in DPAK Surface-Mount Package

Oct 24, 2017

Toshiba Electronic Devices & Storage Corp (TDSC) - spun off from Toshiba Corp in July - has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in ...

Tags: Toshiba, Schottky Barrier, Package

Peregrine's New PE29102 FET Driver Brings Fastest Switching Speeds to GaN Class-D Audio

Oct 18, 2017

Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE29102 high-speed FET driver. With a ...

Tags: Peregrine Semiconductor, Semiconductor

Amazon to Reveal Latest Version of Its Smart Speakers

Oct 9, 2017

With an aim to rival against the two best-known electronics giants, Apple and Google, Amazon.com Inc., an American e-commerce and cloud computing company based in Seattle, Washington, launched its latest version of smart speakers, ...

Tags: Amazon, Smart Speakers

Kyoto University Professor Hiroyuki Matsunami Awarded Honda Prize for Research on SiC Power Devices

Sep 27, 2017

Honda Foundation (a public-interest incorporated foundation created by Honda Motor Co Ltd’s founder Soichiro Honda and his younger brother Benjiro Honda) says that the Honda Prize 2017 will be awarded to Kyoto University professor ...

Tags: Power Devices

Suny Poly Professor Awarded $750, 000 by DOE to Develop More Efficient, Cost-Effective SiC Power Electronics Chips

Sep 26, 2017

State University of New York (SUNY) Polytechnic Institute says that associate professor of nanoengineering Dr Woongje Sung has been selected to receive $750,000 in federal funding from the US Department of Energy (DOE) to develop silicon ...

Tags: Power Electronics Chips, Suny Poly

Navitas Partners with Asian Distributors to Accelerate GaN Power IC Adoption

Jun 29, 2017

Navitas Semiconductor Inc of El Segundo, CA, USA has expanded its support in Asia by entering two new distribution partnerships for its gallium nitride (GaN) power ICs. By partnering with Myland Technologies Inc and Allied Group (HK) Ltd, ...

Tags: GaN Power, IC Adoption

Rohm Expands Full-SiC Power Module Lineup

May 23, 2017

Japan’s ROHM Semiconductor has developed 1200V 400A/600A-rated full-silicon carbide (SiC) power modules [BSM400D12P3G002/BSM600D12P3G001] - available in June (for samples and OEM quantities) - optimized for inverters and converters in ...

Tags: power modules, Semiconductor

PowerAmerica Funding Speeds Transphorm's Development of 900V GaN HEMT Product

Apr 25, 2017

Due to funding assistance from PowerAmerica – a private-public partnership between the US Department of Energy, industry and academia – Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and manufactures what ...

Tags: PowerAmerica, GaN products

GEW to Shocase Specialist UV Line-up at 2017 ICE Shows

Mar 1, 2017

GEW will exhibit its new specialist UV curing systems for the coating and converting industries at this year’s ICE shows in Munich and Orlando. Both events will be an opportunity to update the professionals on the full range of UV ...

Tags: UV curing systems, coating

Monolith Makes Availability 1200V SiC Schottky Engineering Samples

Oct 12, 2016

Monolith Semiconductor Inc of Round Rock, TX, USA has announced the availability of engineering samples of 1200V, 5A and 10A silicon carbide (SiC) Schottky diodes in a TO-220 package. Manufactured in the 150mm SiC foundry of X-FAB Texas, ...

Tags: Monolith Semiconductor Inc, 1200V SiC Schottky

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