In booth #930 at the IEEE MTT International Microwave Symposium (IMS 2013) in Seattle (4-6 June), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies) has introduced a new ...
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride on silicon (GaN-on-Si)-based RF power transistors for the defense, communications, broadband and industrial & scientific markets, has developed a family of products ...
RF Micro Devices Inc of Greensboro, NC, USA has launched a broadband, microwave voltage-controlled attenuator. The RFSA2113 provides a complete monolithic solution in a small 3mm x 3mm QFN package and operates over a frequency range of ...
Tags: RFMD Attenuators, Power Control
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
In booth 2120 at the IEEE MTT-S International Microwave Symposium (IMS 2013) in Seattle (4–7 June), wireless and optical communications component and module provider Sumitomo Electric Device Innovations USA Inc of San Jose, CA, USA ...
Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp – has expanded its gallium nitride high-electron-mobility transistor (GaN HEMT) lineup with the addition of three new ...
Tags: Toshiba, Satcom Market
Toshiba America Electronic Components Inc (TAEC) - a subsidiary of Tokyo-based semiconductor maker Toshiba Corp - has added a 200W C-band gallium nitride (GaN) high-electron-mobility transistor (HEMT) to its power amplifier product family. ...
Tags: Toshiba, Power Amplifier
Avago Technologies Ltd of San Jose, CA, USA and Singapore, a supplier of analog interface components for wireless, wireline and industrial applications, has announced two RF power amplifiers (PAs), the MGA-43728 and MGA-43828, and a WiFi ...
Tags: Small-Cell Base, Electrical
In booth #930 at the IEEE MTT International Microwave Symposium (IMS 2013) in Seattle (4-6 June), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies) has launched a broadband ...
Tags: Macom, Broadband VGA
Analog semiconductor maker Skyworks Solutions Inc of Woburn, MA, USA has unveiled a portfolio of low-noise amplifiers (LNAs) that provide what is claimed to be best-in-class noise figure (a critical component to boosting weak incoming ...
Tags: Skyworks, GaAs Phemt LNAs
Cree Inc of Durham, NC, USA says it has now surpassed the milestone of shipping more than 2 million gallium nitride (GaN) high-electron-mobility transistors (HEMTs) for cellular telecommunications, providing benefits over traditional ...
Tags: Cree, Telecom Infrastructure
IBM claims to have achieved a milestone in creating a phased-array transceiver that contains all of the millimeter-wave components necessary for both high data-rate communications and advanced-resolution radar imaging applications. The ...
Tags: IBM, Mobile Communications
GigOptix Inc of San Jose, CA, USA (a fabless supplier of analog semiconductor and optical communications components enabling high-speed end-to-end information streaming over optical fiber and wireless networks) says that it has demonstrated ...
Tags: GigOptix, Electrical, Electronics
GaAs-based broadband wireless and wireline communications component maker Anadigics Inc of Warren, NJ, USA has introduced a new style of RF power amplifier (PA) optimized to power 3G and 4G small-cell base-stations. Paired with digital or ...
Tags: Anadigics, Electrical, Electronics
In booth 2507 at the 2013 IEEE MTT-S International Microwave Symposium (IMS) in Seattle, WA, USA (4-6 June), GigOptix Inc of San Jose, CA, USA (a fabless supplier of analog semiconductor and optical communications components enabling ...
Tags: GigOptix, Electrical