22 June 2012 Peregrine introduces its highest-linearity switches for 4G LTE At this week's 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),Peregrine Semiconductor Corp of San Diego,CA,USA,a fabless ...
Tags: 4G LTE, IMS 2012, highest-linearity switches, Peregrine
22 June 2012 Fujitsu develops first high-output,single-chip 10GHz transceiver using GaN HEMT At the IEEE MTT-S International Microwave Symposium(IMS 2012)in Montreal,Canada(17-21 June),Fujitsu Laboratories of Kawasaki,Japan presented what ...
21 June 2012 Sumitomo launches next-gen GaN HEMT for L and S-band satellite applications In booth 2003 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),wireless and optical communications ...
Tags: Sumitomo Electric, GaN HEMT, Satellite Applications, IMS 2012
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has announced initial sample availability ...
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),Germany's Infineon Technologies AG has launched the BFx840xESD series of SiGe:C(silicon-germanium:carbon)heterojunction bipolar ...
Tags: Infineon, transistors, WiFi
Recognized as a compelling alternative to silicon for many RF applications,gallium nitride(GaN)technology has generated significant industry interest due to its performance advantages,but has faced significant challenges related to ...
Tags: NXP, RF applications, mainstream GaN
In booth 1210 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (17-22 June), RF Micro Devices Inc of Greensboro, NC, USA has launched the RFVA0016 — a highly integrated broadband quarter-watt (1/4W) ...
Tags: RFMD, International, applications
In booth 1507 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (19–21 June), Skyworks Solutions Inc of Woburn, MA, USA (which manufactures high-reliability analog and mixed-signal semiconductors) has ...
Tags: Skyworks, Canada, manufactures
20 June 2012 Toshiba adds gain-and efficiency-optimized C-band GaAs FET PAs for microwave radio and BUCs In booth 710 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(19-21 June),Toshiba America Electronic ...
Tags: Toshiba, GaAs FET PAs, IMS 2012, microwave radio, BUCs
20 June 2012 Toshiba launches high-gain,high-power X-band GaN hybrid IC supporting AESA&PESA radar In booth 2710 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(19-21 June),Toshiba America Electronic ...
Tags: Toshiba, GaN HEMT, AESA&PESA radar, IMS 2012
20 June 2012 NXP's 0.65mm x 0.44mm x 0.2mm SiGe:C GPS LNAs offer 0.60dB noise figure NXP Semiconductors N.V.of Eindhoven,The Netherlands,which provides mixed-signal and standard product solutions,has unveiled the BGU8006 low-noise ...
Tags: NXP Semiconductors, WLCSP, GPS LNAs, BGU8006 LNA
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17–22 June),Freescale Semiconductor of Austin,TX,USA,which provides RF power technology for cellular markets,has launched new Airfast transistors ...
At the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro,OR,USA has launched two gallium arsenide power ...
Sony has showcased a resolution of 500ppi for OLED panels in a symposium at SID 2012,as high as those of the latest LCD panels.The company applied OLED materials with a pixel pitch of 51μm(dot pitch:17μm),which is equivalent to ...
Tags: Sony, Japan, OLED Panel, SID 2012, LCD
Cree Inc of Durham,NC,USA has launched a 40V,0.25µm,GaN-on-SiC HEMT process die product family,with power and bandwidth capabilities through the Ku-band that enables the replacement of travel-wave tubes with solid-state ...
Tags: Cree, GaN-on-SiC, HEMT, Amplifier