Aluminium gallium nitride (AlGaN) buffer layers with high aluminium content are necessary for optimal UV-C LED performance. But their band-edge lies below 300nm, so established 405nm in-situ reflectance is insensitive to the surface ...
Ghent University/IMEC in Belgium and X-Celeprint in Ireland/USA claim "the first III-V optoelectronic components transfer printed on and coupled to a silicon photonic integrated circuit" [Andreas De Groote et al, Optics Express, vol24, ...
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers, says that on 7 June it received official notification from the International ...
In-situ metrology system maker LayTec AG of Berlin, Germany says that, following the request of customers and utilizing the modular concept of its new Gen3 in-situ platform, it has customized and expanded the related in-situ metrology ...
POET Technologies Inc of San Jose, CA, USA — which has developed the proprietary planar optoelectronic technology (POET) platform for monolithic fabrication of integrated III-V-based electronic and optical devices on a single ...
Tags: POET, BB Photonics, integrated photonic
Kyma Technologies Inc of Raleigh, NC, USA (which provides crystalline nitride materials, crystal growth and fabrication equipment, and power switching electronics) and Quora Technology Inc have announced a strategic partnership in the ...
Tags: Kyma technologies, GaN, Quora
For a fourth consecutive year, EV Group of St Florian, Austria (a supplier of wafer bonding and lithography equipment for MEMS, nanotechnology and semiconductor applications) has earned all three awards resulting from VLSIresearch Inc's ...
Tags: EV Group, focused chip
Researchers in Hong Kong and USA have been working on producing optically pumped micro-disk lasers on exact (001) silicon [Yating Wan et al, Appl. Phys. Lett., vol108, p221101, 2016]. The team from Hong Kong University of Science and ...
AppDynamics Inc of San Francisco, CA, USA says that Qorvo Inc of Greensboro, NC and Hillsboro, OR, USA (which provides core technologies and RF solutions for mobile, infrastructure and aerospace/defense applications) has chosen its ...
Tags: Qorvo, semiconductor, wafer
In advance of the Citi Technology Conference on 9 June, engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA updated its investor presentation to note the sale of certain RF assets formerly owned by ...
Integrated passive device maker OnChip Devices Inc of Santa Clara, CA, USA says that its wafer fabrication facility is offering backside metallization (BSM) of thin films for applications such as military, medical, and instrumentation. ...
Tags: Sputtering, HB-LEDs, GaN-on-Si, Wafer bonding
In-situ metrology system maker LayTec AG of Berlin, Germany says that epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has purchased a large number of its latest metrology systems for fab-wide metal-organic chemical vapor ...
Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...
Tags: Laser Diodes, Si Substrates
ClassOne Technology of Kalispell, MT, USA, which manufactures wet-chemical processing equipment including Solstice electroplating systems (especially for emerging markets and other cost-conscious users of ≤200mm substrates), is reporting ...
Ireland's Tyndall National Institute (based at University College Cork) is leading the European consortium TOP-HIT (Transfer-print OPerations for Heterogeneous INtegration) to develop novel technology that will address the challenge of ...