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20nm
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Aluminium Nitride Schottky Barrier Diodes with Breakdown More Than 1kv
Aug 3, 2017Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...
Tags: semiconductor, MOCVD
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Berkeley Lab-LED Team Fabricates Transistor with Record 1nm-Long Gate
Oct 12, 2016A research team led by faculty scientist Ali Javey at the US Department of Energy's Lawrence Berkeley National Laboratory (Berkeley Lab) has created a transistor with a gate length (the defining dimension of a transistor) just 1nm long, ...
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Electrically Driven Single-Photon Emission From Atomically Thin Diodes
Oct 12, 2016The UK's University of Cambridge and Japan's National Institute for Materials Science have developed single-photon emission devices using layers of graphene, hexagonal boron nitride (hBN), and transition-metal dichalcogenides (TMDs) [Carmen ...
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Samsung Starts Mass Producing Industry's First 10-Nanometer Class DRAM
Sep 29, 2016Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first 10-nanometer (nm) class* , 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips and ...
Tags: Samsung, 10nm-class DRAM, DDR4
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Relaxing Multiple Quantum Wells with Low-Temperature Barriers
Jul 27, 2016South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...
Tags: Low-Temperature Barriers, Quantum
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Vishay Launches Dual-Color Red and Ir Diode
Jun 15, 2016Vishay Intertechnology Inc of Malvern, PA, USA has introduced a new dual-color red and IR emitting diode designed to save space in wearable devices and medical patient monitoring systems. Offered in a compact 2mm x 2mm x 0.87mm package, ...
Tags: Vishay, Wearable devices, Medical patient monitoring systems.
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Silicon Dioxide Charge Inverter Boosts Hole Injection in IngaN LEDs
Apr 21, 2016Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...
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Indium Gallium Nitride Barriers Enhance LED Power And Efficiency
Mar 15, 2016South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...
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Direct Growth Of III-V Quantum Dot Lasers On Silicon Substrate
Mar 15, 2016Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE
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Tantalum Barrier Reduces Gallium Phosphide Contact Resistance
Mar 9, 2016Korea University has been working to improve metal contacts on aluminium gallium indium phosphide (AlGaInP) light-emitting diodes (LEDs) [Dae-Hyun Kim et al, Jpn. J. Appl. Phys., vol55, p032102, 2016]. In particular, the research team added ...
Tags: AlGalnP, Tantalum barrier, LED
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Hybrid Growth of Gallium Nitride Tunnel Junctions
Feb 14, 2016University of California Santa Barbara (UCSB) in the USA has been developing a hybrid technique to create III-nitride tunnel junctions (TJs) using a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy ...
Tags: Gallium Nitride Tunnel, Hybrid
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Scandium Nitride Buffer for Gallium Nitride on Silicon Applications
Dec 8, 2015Researchers in Germany are proposing scandium nitride (ScN) as a suitable buffer for gallium nitride (GaN) on silicon (Si) growth [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, 2015]. The attraction of ScN is a very small mismatch ...
Tags: GaN devices, microscope
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Scientech March Sales up
Apr 15, 2015Scientech has reported March consolidated revenues increased 69.3% sequentially to NT$313 million (US$10 million). Scientech's cumulative 2015 revenues through March reached NT$671 million, rising 22.5% from a year ago. Sales of ...
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Spin-Coating of Silver Nanowires as Transparent Electrode for InGaN LEDs
Feb 10, 2015Researchers in Korea have used spin-coated silver nanowires (Ag NWs) to improve the performance of indium gallium nitride light-emitting diodes (InGaN LEDs) [Gyu-Jae Jeong et al, Appl. Phys. Lett., vol106, p031118, 2015]. The team based at ...
Tags: Spin-Coating, InGaN LEDs
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Epistar and Tsmc Approved a Sale of Tsmc Solid State Lighting Shares
Jan 13, 2015Epistar Corp. and Taiwan Semiconductor Manufacturing Co. (TSMC ) held Board of Directors’ meetings today and approved a sale of TSMC Solid State Lighting (TSMC SSL) shares. Epistar will acquire all shares of TSMC SSL held by TSMC and ...
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