In booth J2554 of its local agent APEC at the SEMICON Taiwan show in Taipei (5-7 September) and in booth 354 at European Microwave Week (EuMW 2018) in Madrid, Spain (23-28 September), EpiGaN nv of Hasselt, near Antwerp, Belgium - which ...
Tags: GaN Epiwafer, epitaxial wafer
Expanding on its gallium nitride (GaN) power portfolio, Texas Instruments Inc (TI) has launched two high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing designs in speed-critical applications such ...
Tags: GaN Power, GaN FET Drivers
ON Semiconductor of Phoenix, AZ, USA – which supplies power management, analog, sensors, logic, timing, connectivity, discrete, system-on-chip (SoC) and custom devices – has extended its silicon carbide (SiC) diode portfolio by ...
To keep pace with the dramatic size and weight reductions in laptop designs over the last 10 years, Navitas Semiconductor Inc of El Segundo, CA, USA has launched what it claims is the smallest 65W USB-PD (Type C) adapter reference design. ...
Tags: GaN Power, Laptop Adapter
Chinese Vice Minister of Commerce Wang Shouwen was interviewed by the journalists from Xinhua News Agency on December 5 in Geneva. He said that, to break the deadlock of WTO EGA negotiation, China tried to seek solutions to the issues of ...
Tags: WTO, EGA Negotiation
From 7 to 10th September, CIFF-Shanghai, the September edition of the China International Furniture Fair, will present CIFF Outdoor & Leisure 2016, a platform specialising in outdoor furniture and that offers a wide range of products to ...
Chinese and U.S. representatives expressed optimism for the future of the China-U.S. Bilateral Investment Treaty (BIT) negotiations during a session at this year's Boao Forum for Asia annual conference. Against the backdrop of a global ...
Tags: China-U.S BIT, global economy
Navitas Semiconductor Inc of El Segundo, CA, USA has launched its first products, which are claimed to be the industry's first gallium nitride (GaN) power ICs. Navitas was founded in 2013, and in 2014 investment firm MalibuIQ licensed the ...
Tags: GaN, Power electronics
Fairchild Semiconductor of San Jose CA, USA has launched its first 1200V silicon carbide (SiC) diode, the FFSH40120ADN, in its series of upcoming SiC solutions. The 1200V diode's combination of switching performance, reliability and low ...
Tags: Fairchild
In booth 1655 at the Applied Power Electronics Conference & Exposition (APEC 2016) in Long Beach, CA, USA (20–24 March), Monolith Semiconductor Inc of Round Rock, TX, USA is demonstrating its fast-switching silicon carbide (SiC) ...
Tags: SiC MOSFET, SiC Schottky barrier diodes, SiC power devices
In booth #2244 at the 31st IEEE Applied Power Electronics Conference and Exposition (APEC 2016) in Long Beach (20-24 March), Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on ...
Tags: GaN FETs, DC-DC Converter
Insiders are predicting an increasing in the number of Chinese tourists visiting the United States next year, partly due to the easing of restrictions on Chinese citizens acquiring tourist visas. 2016 is also the China-US tourism year, as ...
Tags: Chinese Tourists, Travel
Taiwan's machine-tool makers have entered into an alliance with the island's aircraft builders and a government-backed laboratory to develop intelligent industrial technology to sharpen their machine tool capability to manufacture aircraft, ...
Tags: aircraft-building, intelligent industrial, Processing Machinery
Chinese Minister of Commence Gao Hucheng and U.S. Trade Representative Michael Froman discussed and reached consensus on the negotiations on the expansion of the WTO Information Technology Agreement on Wednesday in Nairobi, Kenya. ...
The 11thseminar of the series of seminars called the “Brilliant 12th Five Year” was held on October 19 in Beijing. Our Journalist interviewed the reporter, China International Trade Representative and Vice Minister of Commerce ...