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AlGaAs
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Reducing Subthreshold Swing of Gallium Arsenide Transistors
Sep 28, 2016Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
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IQE Equips Complete Fab with Laytec Tools for Mocvd Process Monitoring
Jun 15, 2016In-situ metrology system maker LayTec AG of Berlin, Germany says that epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has purchased a large number of its latest metrology systems for fab-wide metal-organic chemical vapor ...
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Vertical Epitaxial Heterostructure GaAs Optical Transducers
Mar 9, 2016Researchers in Canada claim the highest reported optical-to-electric power conversion of more than 65% (Figure 1) for a 150W/cm2 (~1500 suns) tuned narrow spectrum input from high-powered laser diodes [S. Fafard et al, Appl. Phys. Lett., ...
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VCSEL Market Increasing at a Compound Annual Growth Rate of 33.1%
Aug 20, 2014The vertical-cavity surface-emitting laser (VCSEL) market is increasing at a compound annual growth rate (CAGR) of 33.1% from $501m in 2013 to nearly $2.1bn in 2018, estimates BCC Research in its report ‘Vertical-Cavity ...
Tags: VCSEL Market, laser
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The Group of III-V Semiconductors Has Developed a Highly Conductive TJ Grown
May 30, 2014The Group of III-V Semiconductors of the Solar Energy Institute at the Technical University of Madrid (Instituto de Energía Solar at Universidad Politécnica de Madrid, IES-UPM) has developed a highly conductive, high-bandgap ...
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Researchers Have Used Strain to Alter The Light-Emitting Properties of GaAs
Apr 29, 2014Researchers in Switzerland and Norway have used strain to alter the light-emitting properties of gallium arsenide (GaAs) nanowires [G. Signorello et al, Nature Communications, vol5, p3655, published online 10 Apr 2014]. The researchers from ...
Tags: Electrical, Electronics
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A Way to Use Standard Semiconductors to Detect Light Has Been Developed
Apr 22, 2014Researchers at Georgia State University, the University of Leeds and China's Shanghai Jiao Tong University have developed a way to use standard semiconductors to detect light over a much broader range of wavelengths, potentially opening up ...
Tags: Electrical, Electronics
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MOCVD Regrowth Were Combined with Gate-All-Around Metal Sputtering
Feb 13, 2014University of Illinois at Urbana-Champaign has realized junctionless (JL) gallium arsenide (GaAs) nanowire field-effect transistors (NWFETs) "for the first time" by implantation-free source/drain metal-organic chemical vapour deposition ...
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MOVPE Growth of AlGaAs on GaAs Is Limited by Lattice Mismatch
Dec 20, 2013It is known that metal-organic vapor phase epitaxy (MOVPE) growth of AlGaAs on GaAs is limited by lattice mismatch at room temperature and not at growth temperature (A. Maassdorf et.al., J. Cryst. Growth 370 (2013) 150-153), notes in-situ ...
Tags: Laser Structures, Electronics
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Researchers Have Used Evanescent Wave Coupling to Enhance The Light Output Power
Dec 19, 2013Researchers at the National Institute of Advanced Industrial Science and Technology (AIST) in Japan have used evanescent wave coupling to enhance the light output power of red light-emitting diodes (LEDs) by a factor of 3.8 [Guo-Dong Hao ...
Tags: Red LEDs AlGaInP, LED, Electrical, Electronics
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Researchers Used CdSe Quantum Dots QDs to Increase The Power Conversion Efficiency
Dec 5, 2013Researchers in Taiwan have used cadmium selenide (CdSe) quantum dots (QDs) to increase the power conversion efficiency of three-junction solar cells by around 10% [Ya-Ju Lee et al, Optics Express, Vol. 21, pA953, 2013]. The team was ...
Tags: CdSe CdSe quantum, Three-junction solar cells p-Ge substrates MOCVD
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IES-UPM Reported a Triple-Junction Concentrator Photovoltaic Solar Cell
Nov 27, 2013The Group of III-V Semiconductors of the Instituto de Energía Solar at Universidad Politécnica de Madrid (IES-UPM) in Spain has reported a triple-junction concentrator photovoltaic (CPV) solar cell with an efficiency of 39.2%, ...
Tags: Spain, IES-UPM, reach, efficiency, triple-junction, CPV, solar cell
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Zhores Alferov Will Receive The 2013 Karl B?Er Solar Energy Medal of Merit
Sep 6, 2013, Nobel Laureate, professor and president of the St. Petersburg Academic University of the Russian Academy of Sciences, and Viacheslav M. Andreev, professor and head of the laboratory of the A.F. Ioffe Physico-Technical Institute in St. ...
Tags: Electrical, Electronics, solar cell
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Vishay Introduced a New Aluminium Gallium Arsenide
Aug 26, 2013Vishay Intertechnology Inc of Malvern, PA, USA has introduced a new aluminium gallium arsenide (AlGaAs) based, high-power, high-speed 940nm infrared emitter for gesture remote control applications. Offering high radiant power of 40mW at ...
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Tokyo Has Improved The Temperature Performance of 1.3 Quantum DOT
Aug 13, 2013University of Tokyo has improved the temperature performance of 1.3μm quantum dot (QD) laser diodes bonded to silicon [Katsuaki Tanabe et al, Appl. Phys. Express, vol6, p082703, 2013]. Photonic circuits are commonly created in silicon, ...
Tags: Quantum Dot Lasers, Electrical, Electronics
