AlN substrates articles & resources on Made-in-China.com

Aluminium Nitride Schottky Barrier Diodes with Breakdown More Than 1kv

Aug 3, 2017

Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...

Tags: semiconductor, MOCVD

CISSOID Delivers Prototypes of Three-Phase 1200V/100A SiC MOSFET Intelligent Power Modules to Thales

Apr 19, 2016

Fabless high-temperature and and extended-lifetime semiconductor firm CISSOID of Mont-Saint-Guibert, Belgium has delivered the first prototypes of a three-phase 1200V/100A silicon carbide (SiC) MOSFET intelligent power module (IPM) to ...

Tags: CISSOID SiC power MOSFET SiC Schottkys

Crystal IS Expands Optan SMD Product Line For Instrumentation With Higher-Output DUV LEDs

Mar 9, 2016

Crystal IS Inc of Green Island, NY, USA, an Asahi Kasei company that makes proprietary ultraviolet light-emitting diodes (UVC LEDs), has augmented its Optan SMD (surface-mount device) product line for instrumentation with the addition of ...

Tags: Crystal IS, UVC LEDs

HexaTech Accquires Energy Funding from DOE

Nov 13, 2015

HexaTech Inc. announced today that it has received a continuation of funding under the U.S. Department of Energy's Advanced Research Projects Agency (ARPA-E) development program. The cost-share extension is valued at $1.2 million over 1 ...

Tags: HexaTech, AlN, semiconductor

Crystal IS Adds to-39 Package with Flat Window to Line of Lattice-Matched Commercial UVC LEDs

Nov 12, 2015

Crystal IS Inc of Green Island, NY, USA, an Asahi Kasei company that makes proprietary ultraviolet light-emitting diodes (UVC LEDs) grown pseudomorphically (strained) on aluminum nitride (AlN) substrates, says that its newest Optan product ...

Tags: Crystal IS, UVC LEDs

Crystal IS Unveils New UVC LEDs

Nov 12, 2015

Crystal IS’s newest Optan product is a surface mount device (SMD). Like other Optan offerings, the high-performance UVC LED is based on native Aluminum Nitride (AlN) substrates, proven to overcome limitations of other UVC LEDs in the ...

Tags: Crystal IS, Uvc Leds, OptanSMC

HexaTech Signs Okaya as Sole Representative in Japan

Aug 10, 2015

HexaTech Inc of Morrisville, NC, USA, which manufactures aluminium nitride (AlN) substrates and is developing long-life UV-C LEDs and high-voltage power devices, has signed a broad, strategic agreement with Okaya & Co Ltd of Nagoya, Japan, ...

Tags: UV-C LED, LED products

265nm-Wavelength LEDs Is More Powerful and Efficient

Apr 22, 2015

Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...

Tags: DUV LEDs, DUV devices

Sensorex Introduced The First Family of UVT Monitors Using UVC LEDs as a Light Source

Mar 24, 2015

Sensorex (which manufactures sensors for water applications) has introduced the first family of ultraviolet transmittance (UVT) monitors using UVC LEDs instead of mercury-based lamps as a light source. The LEDs are supplied by Crystal IS ...

Tags: UVC LEDs, Sensorex, Electronics

Crystal IS Introduces Global Partner

Feb 4, 2015

Crystal IS Inc of Green Island, NY, USA, an Asahi Kasei company that makes proprietary ultraviolet light-emitting diodes (UVC LEDs) grown pseudomorphically (strained) on aluminum nitride (AlN) substrates, has introduced the Optan ...

Tags: Crystal IS, Optan

NCSU Has Been Developing Homo-Epitaxy of Non-Polar AIN with a View to DUV

Oct 30, 2014

North Carolina State University (NCSU) has been developing homo-epitaxy of non-polar aluminium nitride (AlN) with a view to deep ultraviolet (DUV, less than 300nm wavelength) optoelectronics [Isaac Bryan et al, J. Appl. Phys., vol116, ...

Tags: aluminium nitride, UV LED

Taiwan Researchers Claim to Bumping Technology to Create Piezoelectric-Induced Performance

Jul 7, 2014

Researchers in Taiwan claim to be the first to use bumping technology to create piezoelectric-induced performance enhancement in flip-chip packaged aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) [Szu-Ping Tsai ...

Tags: Nitride Semiconductor, packaged aluminium

Crystal IS Announced Availability of Its Optan UVC LED

Jun 11, 2014

Crystal IS Inc of Green Island, NY, USA, an Asahi Kasei company that makes proprietary ultraviolet light-emitting diodes (UVC LEDs) grown pseudomorphically (strained) on aluminum nitride (AlN) substrates, has announced availability of its ...

Tags: LED, Electrical, Electronics

Researchers in France Have Developed a Technique to Directly Grow Graphene

Mar 13, 2014

Researchers in France have developed a technique to directly grow graphene on aluminium nitride (AlN) crystalline templates on silicon substrates [A. Michon et al, Appl. Phys. Lett., vol104, p071912, 2014]. Up to now, attempts to use ...

Tags: Electrical, Electronics

Epistar Are Developing a Method to Transfer InGaN

Feb 21, 2014

Researchers associated with Taiwan National Central University and Epistar Corp are developing a method to transfer indium gallium nitride (InGaN) light-emitting diodes (LEDs) to ceramic aluminium nitride (AlN) substrates for high-voltage ...

Tags: InGaN LED, Ceramic Substrate

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